Solid-state transformer based locomotive AC-DC-AC traction system and method

Abstract

The invention relates to a high-voltage SiC solid-state transformer based high-speed rail locomotive AC-DC-AC traction system, in particular to a solid-state transformer based locomotive AC-DC-AC traction system and method. Solid-state transformer modules made of SiC materials are adopted, and input sides of the transformer modules are in series connection while output sides are in parallel connection to form the high-speed rail locomotive AC-DC-AC traction system. Compared with traction transformers made of conventional semiconductor materials, solid-state transformers made of the SiC materials have the advantages that due to good power handling capability and frequency capability of the transformers, size and weight of the transformers can be reduced, load weight of a locomotive is reduced greatly, and good economical efficiency is realized; the input sides are in series connection while the output sides are in parallel connection, so that the high-speed rail locomotive traction system is easy to expand, the locomotive can be kept in normal operation within a period of time if the secondary edge of one solid-state transformer module has loss, and accordingly reliability is improved.

Description

technical field [0001] The invention relates to a high-speed railway locomotive AC-DC-AC traction system based on a high-voltage SiC solid-state transformer, in particular to an AC-DC-AC traction system and method for a locomotive based on a solid-state transformer. Background technique [0002] Since the advent of silicon thyristors in the 1950s, power semiconductor devices have achieved unprecedented development. Early high power converters such as traction converters were almost all based on thyristors. In the mid-1980s, the 4.5kV GTO was widely used and became the preferred device for high-power converters in the next decade. In the second half of the 1980s, IGBT composite devices were developed; at the same time, the IGCT produced by improving the GTO technology has more significant advantages than the traditional GTO. The GTO switching frequency is about 500Hz, while the IGCT and high-power IGBT The turn-on and turn-off losses are relatively low, and it can work at a...

AI Technical Summary

Problems solved by technology

In these high-voltage SiC devices under development, the on-state resistance of SiC MOSFETs increases significantly with their blocking voltage and operating junction temperature, which makes the device unusable for applications powered by high-voltage DC power supplies (≥15kV)

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