A method for plasma texturing of azo thin films for thin film solar cells

A solar cell and plasma technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of insignificant texture effect, limited particle energy, environmental pollution, etc., to improve the light trap effect and improve the controllability Effect

Inactive Publication Date: 2017-04-05
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Wet etching has the advantages of large-area substrate processing and fast etching speed. However, because the etching speed is too fast, it is not easy to control the etching process. At the same time, the use of acid or alkali solution is likely to cause environmental pollution.
For the method of directly preparing textured AZO thin films, the texturing effect is not obvious due to the limited particle energy during sputtering deposition.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for plasma texturing of azo thin films for thin film solar cells
  • A method for plasma texturing of azo thin films for thin film solar cells
  • A method for plasma texturing of azo thin films for thin film solar cells

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] For the AZO glass substrate, first rinse with decontamination powder and water until there are no air bubbles; then rinse with acetone, then rinse with 95% ethanol, and ultrasonically clean with ethanol solution for 20 minutes; finally rinse with deionized water, and use Ultrasonic cleaning with deionized water for 20 minutes, and then drying with high-purity nitrogen, set aside.

[0036] Send the cleaned AZO glass substrate to the sampling chamber, and send the substrate to the substrate holder in the reaction chamber of the plasma etching device through the sampling chamber; turn on the heating power supply, heat the substrate holder, and keep heating The temperature is 200°C; the vacuum of the reaction chamber is evacuated to 1.5×10 -4 Pa; Introduce nitrogen and hydrogen, the flow rates are 8sccm and 2.5sccm respectively; adjust the working pressure of the reaction chamber to keep it at 3Pa; turn on the radio frequency power supply, preheat for 5 minutes, set the fre...

Embodiment 2

[0039] The cleaning of the AZO glass substrate adopts the method of embodiment one; the AZO glass substrate cleaned up is sent to the sample introduction chamber, and the substrate is sent to the substrate holder of the reaction chamber of the plasma etching device through the sample introduction chamber; Heating the power supply, heating the substrate rack, and keeping the heating temperature at 200°C; pumping the vacuum of the reaction chamber to 1.5×10 -4 Pa; Introduce nitrogen and hydrogen, the flow rates are 8sccm and 2.5sccm respectively; adjust the working pressure of the reaction chamber to keep it at 3Pa; turn on the radio frequency power supply, preheat for 5 minutes, set the frequency and power to 456KHz and 1800W respectively; adjust the radio frequency Match until the ignition generates plasma; continue to feed the above-mentioned nitrogen and hydrogen, and keep heating the substrate holder at 200 ° C, and start timing at the same time; after 10 minutes, turn off t...

Embodiment 3

[0042]The cleaning of the AZO glass substrate adopts the method of embodiment one; the AZO glass substrate cleaned up is sent to the sample introduction chamber, and the substrate is sent to the substrate holder of the reaction chamber of the plasma etching device through the sample introduction chamber; Heating the power supply, heating the substrate rack, and keeping the heating temperature at 200°C; pumping the vacuum of the reaction chamber to 1.5×10 -4 Pa; feed nitrogen and hydrogen, the flow rates are 7sccm and 3sccm respectively; adjust the working pressure of the reaction chamber to keep it at 3Pa; turn on the RF power supply, preheat for 5 minutes, set the frequency and power to 456KHz and 1200W respectively; adjust the RF matching , until the plasma is generated by the glow; continue to feed the above-mentioned nitrogen and hydrogen, and keep heating the substrate holder at 200 ° C, and start timing at the same time; after 10 minutes, turn off the radio frequency powe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the field of semiconductor industry, in particular to a plasma texturing method for AZO thin film of thin film solar cell. The advantages of physical etching and chemical etching of plasma etching method and high controllability of the etching degree are used to etch thin-film solar cell AZO thin film. This method can achieve the effect of wet etching, and at the same time, because no corrosive solution is used, the pollution caused by improper handling of the reaction solution is avoided; The control of frequency and etching time improves the controllability of etching. Compared with the sputter-deposited textured AZO film, the texture effect is not obvious due to the limited energy of the particles, and an excellent etching effect can be achieved. A texture method for AZO thin film of thin-film solar cells with excellent light-trapping structure effect, high controllability of etching process and no pollution is realized, so as to be used in the technology of improving conversion efficiency of solar cells.

Description

technical field [0001] The invention relates to the field of semiconductor industry, especially solar cells, in particular to a plasma texturing method for AZO thin films of thin-film solar cells. Background technique [0002] With the intensification of energy shortage and environmental pollution, all countries are stepping up the pace of development of the photovoltaic industry. At present, in order to solve the problems of high cost and low efficiency of solar cells, various new processes and technologies are applied to the preparation of cells. In the technology of improving the conversion efficiency of solar cells, optical optimization is an important optimization technology, and its purpose is to increase the incident light intensity or photon flux inside the solar cell. Increasing photon flux means that solar cells can use incident photons more effectively, increase photogenerated current, achieve higher conversion efficiency, and reduce the cost of photovoltaic powe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0236
CPCH01L31/02363Y02E10/50Y02P70/50
Inventor 周海平常小幻向勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap