Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of thin film transistor and its manufacturing method and array substrate

A technology for thin film transistors and substrates, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as poor electrical contact between source and drain and oxide semiconductor layers, achieve poor electrical contact, improve display quality, The effect of eliminating the mask process forming process

Active Publication Date: 2018-02-09
BEIJING BOE OPTOELECTRONCIS TECH CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] In view of this, the main purpose of the present invention is to provide a thin film transistor and its manufacturing method and array substrate, which can effectively solve the problem of poor electrical contact between the source and drain electrodes and the oxide semiconductor layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of thin film transistor and its manufacturing method and array substrate
  • A kind of thin film transistor and its manufacturing method and array substrate
  • A kind of thin film transistor and its manufacturing method and array substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0063] The basic idea of ​​the present invention is: when forming the source and drain electrodes, directly deposit the highly doped amorphous silicon thin film on the oxide semiconductor thin film layers on both sides of the barrier layer to increase the carrier concentration at the oxide semiconductor interface, In this way, the oxide semiconductor can exhibit the electrical characteristics of a conductor, and the source and drain electrodes are formed.

[0064] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0065] figure 2 It is a schematic flow chart of the manufacturing method of the thin film transistor of the present invention, such as figure 2 As shown, the implementation method is as follows:

[0066] Step 201: forming a gate on the substrate;

[0067] Specifically, a gate layer thin film is formed on the substrate 1 and patterned to form the gate 2 . Here, the gate can be...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention disclosed a thin film transistor, including the grid formed on the substrate, forming a grid inspeur layer covered with the entire substrate on the grid, forming a semiconductor layer on the grille insulation layer, and a blocking layer formed on the semiconductor layer., The source and drains on the two sides of the blocking layer formed on the grille insulation layer, as well as the signal terminal formed on the drain;Semiconductor layer settings.The present invention also disclosed the production method and a array -based plate of thin film transistors. The present invention can effectively solve the problem of poor contact with the electrical contact with the oxide semiconductor layer.

Description

technical field [0001] The invention relates to the technical field of displays, in particular to a thin film transistor, a manufacturing method thereof, and an array substrate. Background technique [0002] At present, oxide thin film transistors are mainly zinc oxide-based thin film field effect transistors of polycrystalline oxide semiconductor materials, and amorphous oxide semiconductors, such as: indium gallium zinc oxide (IGZO) semiconductors are used as the semiconductor layer of oxide thin film transistors. Its excellent properties such as high mobility, low sub-threshold, low current, and low-temperature production have attracted the attention of the liquid crystal industry. However, there are still some problems to be solved in the existing amorphous oxide semiconductor thin film transistors, for example, it is difficult to form a good electrical contact between the source and drain electrodes of the metal material and the amorphous oxide semiconductor layer. [...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/336H01L27/15
CPCH01L23/535H01L29/66969H01L29/786H01L29/78618H01L29/7869H01L2924/0002H01L29/78693H01L27/1225H01L2924/00
Inventor 阎长江龙君朱孝会谢振宇陈旭
Owner BEIJING BOE OPTOELECTRONCIS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com