Forming method of electric conduction structure
A technology of conductive structure and conductive layer, applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of affecting device performance, poor quality of conductive plugs, etc., to ensure conductive performance, good morphology, and increased width. The effect of size
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[0035] As mentioned in the background art, voids are easily generated in the conductive plug formed in the prior art, and its quality is poor and its performance is unstable.
[0036] After research by the inventor of the present invention, please continue to refer to Figure 1 to Figure 4 , as the feature size of the device is continuously reduced, the width of the top of the opening 102 is also continuously reduced, resulting in an increase in the aspect ratio (Aspect Ratio) of the opening 102. Currently, the aspect ratio of the opening used to form a conductive plug is greater than 5: 1. The seed layer 103 is formed on the sidewall and bottom surface of the opening 102 by atomic layer deposition or physical vapor deposition. However, as the aspect ratio of the opening 102 increases and the width of the top of the opening 102 shrinks, the seed layer More material is accumulated on the sidewall surface near the top of the opening 102; after the seed layer is formed, the width...
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