Device for increasing output power of microstrip type short-rise-time double-exponential pulse source

Abstract

The invention discloses a device for increasing the output power of a microstrip type short-rise-time double-exponential pulse source and relates to the technical field of microwave electronics. The device for increasing the output power of the microstrip type short-rise-time double-exponential pulse source comprises a synchronous trigger circuit, a first pulse source, a second pulse source and a power combiner. The output end of the synchrotrons trigger circuit is connected with the input end of the first pulse source and the input end of the second pulse source. The power combiner is a substrate provided with two signal transmission lines. The two signal transmission lines are two identical microstrip lines which are symmetrically arranged on the substrate. The two microstrip lines share the same input end. The first pulse source and the second pulse source are arranged on the substrate. The output end of the first pulse source and the output end of the second pulse source are connected with the respective input ends of the two microstrip lines. The impedance of the output end shared by the two microstrip lines is matched with that of the corresponding pulse source. Each microstrip line is composed of multiple line branches which are connected with one another in an end-to-end mode from the input end to the output end, wherein the impedances of the line branches become larger successively. An isolation resistor is further arranged between the two microstrip lines. By the adoption of the device for increasing the output power of the microstrip type short-rise-time double-exponential pulse source, high-isolation high-efficiency low-reflection combination of two combined signal lines is achieved.

Description

technical field [0001] The invention relates to the field of microwave electronics technology. Background technique [0002] In the electromagnetic compatibility test, it is necessary to develop a pulse source to simulate the interference source, and to evaluate the electromagnetic pulse immunity or sensitivity of the equipment or device, the peak voltage (or peak power) of the pulse source output pulse, stability, repetition Frequency, leading edge steepness, pulse width, etc. are all key indicators of the pulse source. In recent years, due to the advantages of high stability, fast switching speed, high repetition frequency, and small size, semiconductor solid-state switches have been extensively studied in the field of pulse power. Moreover, in order to reduce the loop inductance, increase the steepness of the output pulse front, and make it more miniaturized, many semiconductor high-speed switches are made of chip type, and the pulse source made of this type of chip swit...

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Problems solved by technology

Moreover, in order to reduce the loop inductance, increase the steepness of the output pulse front, and make it more miniaturized, many semiconductor high-speed switches are made of chip type, and the pulse source made of this type of chip switch is generally a high-frequency microstrip However, compared with the spark gap switch, this type of semiconductor switch has a low withstand voltage value and low output pulse power, so it is very important to increase the output power of this type of pulse source

[0003] At present, there are two ways to increase the output power of this type of pulse source. One is to use more stages of Marx circuit cascading to increase the output voltage of the pulse source itself. However, too many stages will inevitably affect the output pulse. stability, and in the electromagnetic compatibility test, high stability is the primary indicator; the other is to use a power combiner for power synthesis of multiple pulse circuits, but because the output pulse of this type of pulse source is a fast edge pulse, With nanosecond or sub-nanosecond rising edge, the spectrum covers DC to GHz or even a wider range, while ordinary single-cell power combiners only have a good synthesis effect on narrowband signals, and cause large reflections on broadband signals and waveform distortion

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