Semiconductor device

A semiconductor and device technology, applied in the field of semiconductor devices, can solve the problem of reducing the quality factor of inductance devices

Active Publication Date: 2016-12-28
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the shielding structure of the prior art will reduce the quality factor Q of the inductance device

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
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Effect test

no. 1 example

[0037] Please refer to figure 2 with image 3 , image 3 It is a top view structure diagram of the grounding metal ring, the conductive ring and the conductive wire in this embodiment, figure 2 yes image 3 A schematic cross-sectional structure along the AA' direction, including: a semiconductor substrate 100; a grounding ring on the surface of the semiconductor substrate 100; a grounding shielding structure on the surface of the semiconductor substrate 100, the grounding ring surrounds the grounding shielding structure, the The ground shield structure includes several concentric conductive rings 102 (such as image 3 ), and the conductive wires 104 passing through the plurality of conductive rings 102 along the radial direction of the conductive ring 102, and the conductive wires 104 are electrically connected to the grounding ring, and the plurality of conductive rings 102 each have a plurality of openings 103 ( Such as image 3 shown), and the openings 103 of adjacen...

no. 2 example

[0064] The difference between the second embodiment and the first embodiment is that it further includes: a polysilicon ring located between the active region ring and the metal ring, the position and shape of the polysilicon ring correspond to the metal ring, and the The polysilicon ring is electrically isolated from the metal ring and the active area ring by a dielectric layer. It will be described below in conjunction with the accompanying drawings.

[0065] Please refer to Figure 6 to Figure 9 , Image 6 is a schematic cross-sectional structure diagram of the semiconductor device of the second embodiment, Figure 7 yes Image 6 A top view of the active area ring shown, Figure 8 yes Image 6 A top view of the polysilicon ring shown, Figure 9 yes Image 6 The top view of the metal ring 230 and the conductive wire 204 shown includes: a semiconductor substrate 200; a ground ring located on the surface of the semiconductor substrate 200; a ground shield structure loca...

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PUM

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Abstract

A semiconductor device, comprising: a semiconductor substrate; a ground ring positioned on the surface of the semiconductor substrate; a ground shield structure positioned on the surface of the semiconductor substrate, the ground ring surrounding the ground shield structure, the ground shield structure comprising several concentric conductive Rings, and conductive wires running through several conductive rings along the radial direction of the conductive rings, and the conductive wires are electrically connected to the grounding ring, each of the plurality of conductive rings has a plurality of openings, and the openings of adjacent conductive rings are arranged alternately; A dielectric layer located on the surface of the semiconductor substrate, the ground ring and the ground shield structure, the dielectric layer surrounding the ground ring and the ground shield structure; a semiconductor device located on the surface of the dielectric layer. The semiconductor device of the invention can improve the shielding ability, reduce substrate loss and improve the performance of the semiconductor device.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device. Background technique [0002] In an existing integrated circuit, such as a CMOS radio frequency integrated circuit (RFIC), an inductor is an important electrical device, and its performance parameters directly affect the performance of the integrated circuit. In the prior art, most of the inductors in integrated circuits use planar inductors, such as planar spiral inductors; the planar spiral inductors are formed by winding metal wires on the surface of a substrate or a dielectric layer; compared with traditional wire wound inductors, planar inductors The device has the advantages of low cost, easy integration, low noise and low power consumption, and more importantly, it is compatible with today's integrated circuit technology. [0003] For inductive devices, there is a quality factor Q to measure their performance. The quality facto...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/552H01L23/58H01L23/64
Inventor 程仁豪王西宁刘凌
Owner SEMICON MFG INT (SHANGHAI) CORP
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