Preparation method of in-situ growth quantum dot optical film

An in-situ growth, quantum dot technology, applied in optics, optical components, instruments, etc., can solve problems such as hindering the performance of quantum dot photoluminescence films

Active Publication Date: 2014-10-08
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current particle size control and dispersion problems still hinder the further improvement of the performance of quantum dot photoluminescent films.

Method used

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  • Preparation method of in-situ growth quantum dot optical film
  • Preparation method of in-situ growth quantum dot optical film
  • Preparation method of in-situ growth quantum dot optical film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) Weigh 1g of polyamic acid and dissolve it in 99g of dimethylformamide, stir it magnetically for 1 hour, then ultrasonically disperse it under 600W power for 0.5 hour to form a polyamic acid solution;

[0024] (2) Weigh 0.205g Na 2 SeSO 3 Dissolve in 10ml deionized water and stir vigorously until completely dissolved to give Na 2 SeSO 3 solution;

[0025] (3) Weigh 0.2045g Cd(CH 2 COO) 2 Dissolve in 10ml deionized water and stir vigorously until completely dissolved to give Cd(CH 2 COO) 2 solution;

[0026] (4) Weigh 0.2571g N(CH 2 COONa) 3 Dissolve in 10ml deionized water and stir vigorously until completely dissolved to give N(CH 2 COONa) 3 solution;

[0027] (5) Cd(CH 2 COO) 2 solution and N(CH 2 COONa) 3 The solution was poured into Na with strong stirring at 10°C 2 SeSO 3 solution, and stirred at this temperature for 5 minutes until completely dissolved;

[0028] (6) Slowly add the polyamic acid solution to the mixed solution prepared in the s...

Embodiment 2

[0034] (1) Weigh 4g of polyamic acid and dissolve it in 96g of dimethylformamide, stir magnetically for 2 hours, and then ultrasonically disperse at 600W for 1.0 hour to form a polyamic acid solution;

[0035] (2) Weigh 0.410g Na 2 SeSO 3 Dissolve in 10ml deionized water and stir vigorously until completely dissolved to give Na 2 SeSO 3 solution;

[0036] (3) Weigh 0.409g Cd(CH 2 COO) 2 Dissolve in 10ml deionized water and stir vigorously until completely dissolved to give Cd(CH 2 COO) 2 solution;

[0037] (4) Weigh 0.5142g N(CH 2 COONa) 3 Dissolve in 10ml deionized water and stir vigorously until completely dissolved to give N(CH 2 COONa) 3 solution;

[0038] (5) Cd(CH 2 COO) 2 solution and N(CH 2 COONa) 3 The solution was poured into Na 2 SeSO 3 solution, and stirred at this temperature for 10 minutes until completely dissolved;

[0039] (6) Slowly add the polyamic acid solution to the mixed solution prepared in the step (5) of vigorous stirring at 15°C, a...

Embodiment 3

[0045] (1) Weigh 6g of polyamic acid and dissolve it in 94g of dimethylformamide, stir magnetically for 3 hours, and then ultrasonically disperse for 1.5 hours under 600W power to form a polyamic acid solution;

[0046] (2) Weigh 0.615g Na 2 SeSO 3 Dissolve in 10ml deionized water and stir vigorously until completely dissolved to give Na 2 SeSO 3 solution;

[0047] (3) Weigh 0.6135g Cd(CH 2 COO) 2 Dissolve in 10ml deionized water and stir vigorously until completely dissolved to give Cd(CH 2 COO) 2 solution;

[0048] (4) Weigh 0.7713g N(CH 2 COONa) 3 Dissolve in 10ml deionized water and stir vigorously until completely dissolved to give N(CH 2 COONa) 3 solution;

[0049] (5) Pour the third mixed solution and the fourth mixed solution into Na 2 SeSO 3 solution, and stirred at this temperature for 15 minutes until completely dissolved;

[0050] (6) Slowly add the polyamic acid solution to the mixed solution prepared in the step (5) of intensive stirring at 20°C, a...

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Abstract

The invention discloses a preparation method of an in-situ growth quantum dot optical film. The method comprises the following steps: in situ growing an organic film layer with high-dispersible quantum dots on an ITO (Indium Tin Oxide) glass substrate by a combined process technology of sol-gel and spin coating, wherein the organic film layer serves as a photoluminescence layer; then, carrying out the organic matter spin coating, encapsulation and insulation processes to finally prepare the in-situ growth quantum dot optical film with high dispersibility. The method is novel, low in preparation cost and simple in preparation process. In addition, the particle diameters of quantum dots in the photoluminescence layer are accurately controlled and dispersibility is good due to the adoption of the in-situ growth technology. According to the preparation process of the quantum dot optical film, the particle diameters of quantum dots are effectively controlled and the high-dispersible distribution of the quantum dots in the photoluminescence layer is realized by fully utilizing obstruction, regulation and control functions of the organic matters to the growth of the quantum dots, so that the photoluminescence property of the quantum dot optical film is effectively improved. Thus, the quantum dot optical film disclosed by the invention has a very important application value in a novel photoelectric display device.

Description

technical field [0001] The invention belongs to the field of photoelectric materials and devices, in particular to a method for preparing an in-situ growth quantum dot optical film. Background technique [0002] With the development of science and technology and the progress of society, people are increasingly dependent on information exchange and delivery. As the main carrier and material basis of information exchange and transmission, display devices have become a hotspot and highland that many scientists engaged in information optoelectronic research are vying to seize. Quantum dot photoluminescent optical thin film devices, as a display device that is most likely to be practical, play a vital role in the fields of information exchange and transmission. However, so far, most of the existing quantum dot photoluminescent optical films are prepared by a two-step method, that is, colloidal quantum dots are first prepared by colloidal chemistry, and then quantum dots are disp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34G02B1/10
Inventor 杨尊先郭太良胡海龙徐胜严文焕
Owner FUZHOU UNIV
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