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Production method for preparing transistor by hot air welding method

A technology of hot air welding and production methods, applied in welding equipment, manufacturing tools, metal processing equipment, etc., can solve problems such as unrealizable, and achieve the effects of reducing virtual welding, high efficiency, and good quality

Inactive Publication Date: 2016-04-20
FOSHAN NANHAI HONGQIAN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above requirements cannot be achieved by manual soldering

Method used

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Examples

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Effect test

Embodiment Construction

[0017] In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below.

[0018] Concrete steps of the present invention are as follows:

[0019] In the first step, the transistor chip to be welded is placed on the welding platform, and the welding machine starts the heating step. The heating step includes a first heating temperature zone and a second heating temperature zone, wherein the first heating temperature zone is heated by hot air flow, Blow to the chip to be welded from the upper and lower directions, the heating temperature is 85°C, after about 80 seconds in this area, the chip of the transistor to be welded enters the second heating temperature area of ​​the knife, and the second heating temperature area adopts induction Heating method, the heating temperature in the induction heating stage is 105°C-110°C, and keep in this area for about 60 seco...

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Abstract

The invention discloses a production method for preparing a transistor through hot-gas welding. A chip and a lead frame are welded through the combination between segmented gradient preheating and hot-gas welding. A layer arrangement method of a first bonding layer and a second weldable layer is adopted in the welding process. Welding defects produced during welding are better eliminated, and meanwhile cold joints are reduced. The production method for preparing the transistor is high in efficiency, good in quality and low in cost.

Description

technical field [0001] The invention relates to a production method of a transistor, in particular to a production method of its high-power transistor. Background technique [0002] Power transistors are suitable for series regulators and switching regulators composed of two chips of an integrated circuit (IC) for control and a power transistor, and other power circuits that are prone to surges. The main applications of high-power transistor chips include switching power supplies for household appliances, such as TVs, microcomputers, household induction cookers, etc., as well as related electrical equipment on automobiles, such as ignition equipment for automobiles, and various electrical appliances used in industry. Such as power control load power supply, controller, DC welding machine and so on. However, the chip welding of high-power transistors generally adopts the manual welding process, and the manual welding chip is inefficient, and at the same time consumes a lot o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K1/20B23K1/012
CPCB23K1/0016B23K1/012B23K2101/42
Inventor 施文桦施金佑
Owner FOSHAN NANHAI HONGQIAN ELECTRONICS
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