Czochralski growing method of magnesium aluminate spinel crystal doped with transition metal ions
A transition metal, magnesium-aluminum spinel technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of poor crystal quality, difficult to use, small diameter, etc., to achieve high-quality results
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Embodiment 1
[0025] A method for growing magnesium-aluminum spinel crystals doped with transition group metal ions, the specific steps of which are as follows:
[0026] (1) Preparation of Cr 3+ The doping concentration is 0.05at% magnesium aluminum spinel single crystal, let Cr 3+ The effective segregation coefficient is k, and TM=Cr 2 o 3 , x=0.0005, using MgAl 2 o 4 Polycrystalline and Cr 2 o 3 Powder as raw material, according to Cr 2 o3 :MgAl 2 o 4 =0.0005 / k :(1-0.0005 / k ) ratio to weigh the ingredients;
[0027] (2) Put the initial raw material for crystal growth into the iridium crucible, and place the MgAl in the direction 2 o 4 Install the seed crystal on the seed crystal rod, close the furnace door, evacuate to below 10Pa, set the heating program to heat up the molten material;
[0028] (3) After the raw materials in the pot are completely melted, keep it for a period of time, and carry out crystal growth at a speed of 10r / min and a pulling speed of 1.2mm / h.
[0...
Embodiment 2
[0031] A method for growing magnesium-aluminum spinel crystals doped with transition group metal ions, the specific steps of which are as follows:
[0032] (1) Preparation of Ti 3+ The doping concentration is 0.05at% magnesium aluminum spinel single crystal, let Ti 3+ The effective segregation coefficient is k, and TM=Ti 2 o 3 , x=0.0005, using MgAl 2 o 4 Polycrystalline and Ti 2 o 3 Powder as raw material, according to Ti 2 o 3 :MgAl 2 o 4 =0.0005 / k :(1-0.0005 / k ) ratio to weigh the ingredients;
[0033] (2) Put the initial raw material for crystal growth into the iridium crucible, and place the MgAl in the direction 2 o 4 Install the seed crystal on the seed crystal rod, close the furnace door, evacuate to below 10Pa, set the heating program to heat up the molten material;
[0034] (3) After the raw materials in the pot are completely melted, keep it for a period of time, and carry out crystal growth at a speed of 12r / min and a pulling speed of 1.5mm / h.
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