Method for surface modification of ZnSe:Ag quantum dots

A technology of surface modification and quantum dots, which is applied in the direction of chemical instruments and methods, luminescent materials, etc., can solve the problems of surface defects, reduce the fluorescence efficiency of quantum dots, and high activity, and achieve the effect of less agglomeration, simple experimental operation, and good stability

Inactive Publication Date: 2014-08-20
SHANGHAI UNIV
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The atoms of quantum dots are almost all surface atoms. There are a large number of uncoordinated bonds in these atoms, which are highly active and easy to form surface defects. Surface defects often reduce the fluorescence efficiency of quantum dots.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for surface modification of ZnSe:Ag quantum dots
  • Method for surface modification of ZnSe:Ag quantum dots
  • Method for surface modification of ZnSe:Ag quantum dots

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] ZnSe: the preparation method of Ag / ZnS quantum dot,

[0023] Specific embodiments of the present invention will now be described below. The first step is to prepare ZnSe:Ag quantum dots. The process is to first prepare the Se source, that is, in a 100ml pear-shaped bottle, after passing through argon for about 30 minutes, add 0.8mmol NaBH in sequence 4 , 0.2mmol selenium powder (Se) and 2ml deionized water reacted for 30min; secondly prepare the Zn source, that is, in a 250ml three-necked flask, pre-pass argon for 30min, then add 0.8mmol zinc nitrate, 0.024mmol silver nitrate, 100ml deionized water and 200 μL 3-mercaptopropionic acid, adjust the pH value to 9 with 2M NaOH, place the three-necked flask in an oil bath at 100°C and heat for 1 h; finally inject the Se source solution into the Zn solution quickly with a syringe, and continue to pass through Argon and maintain 100 ° C oil bath, after 4 hours of reaction;

[0024] The second step is to add 0.2mmol...

Embodiment 2

[0029] ZnSe: the preparation method of Ag / ZnTe quantum dot,

[0030] The first step is to prepare ZnSe:Ag quantum dots. The process is to first prepare the Se source, that is, in a 100ml pear-shaped bottle, after passing through argon for about 30 minutes, add 0.8mmol NaBH in sequence 4 , 0.2mmol selenium powder (Se) and 2ml deionized water reacted for 30min; secondly prepare the Zn source, that is, in a 250ml three-necked flask, pre-pass argon for 30min, then add 0.8mmol zinc nitrate, 0.024mmol silver nitrate, 100ml deionized water and 200 μL 3-mercaptopropionic acid, adjust the pH value to 9 with 2M NaOH, place the three-necked flask in an oil bath at 100°C and heat for 1 h; finally inject the Se source solution into the Zn solution quickly with a syringe, and continue to pass through Argon and maintain 100 ° C oil bath, after 4 hours of reaction;

[0031] The second step is that in a 100mL pear-shaped flask, after passing through argon for about 30 minutes, add 0.8mmo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for surface modification of ZnSe:Ag quantum dots, and belongs to the technical field of composite nano microcrystalline materials. A preparation method comprises the steps: based on the preapred ZnSe:Ag quantum dots, thiourea and ZnTe are adopted for modifying the surface of the quantum dots. The modification process is carried out in a water phase, and the reaction temperature is 100 DEG C. Thiourea is used for direct surface modification to form ZnSe:Ag / ZnS quantum dots; ZnTe modification adopts a prepared Te source, that is to say, sodium borohydride (NaBH4) and a Te powder are utilized to undergo a reaction to prepare sodium hydrogen telluride (NaHTe), then NaHTe is injected into the prepared ZnSe:Ag quantum dots, and a reaction of the two components is carried out to generate a ZnSe:Ag / ZnTe quantum dot solution. The obtained product is uniform in dispersion, good in stability, and little in aggregation, and can be applied to the fields of biological fluorescent labeling, drug separation and some optoelectronic devices.

Description

technical field [0001] The invention relates to a surface modification method of ZnSe:Ag quantum dots, which belongs to the technical field of composite nanocrystal materials. Background technique [0002] ZnSe is an important direct bandgap Ⅱ-Ⅵ group semiconductor luminescent material. It is a sphalerite structure and a face-centered cubic crystal with a wide bandgap (2.8eV) and a large binding energy (21meV). At room temperature, the band gap directly transitions to a luminescent wavelength in the range of blue-violet light. It has good transmission performance for light with a wavelength range of 0.5-22 μm, basically covers the visible-infrared range, and has low material toxicity. It is suitable for optoelectronic devices, biological detection, marking and imaging and other fields. At present, the luminous intensity of ZnSe quantum dots is low, which greatly limits the related applications. Doping with transition elements can effectively improve its luminescent propert...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88
Inventor 李冬梅王刚程涛李杰陈阳李国强刘昆
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap