Photovoltaic conversion element and method of manufacture thereof
A technology for photoelectric conversion components and manufacturing methods, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve the problems of insufficient practicability, photoelectric conversion efficiency, insufficient durability, etc. Effect
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Embodiment 1
[0116]
[0117] The glass substrate (surface resistance value 15Ω / □) obtained by forming a film of ITO by a sputtering method was washed to form an electrode for a negative electrode (electron output electrode).
[0118]
[0119] (1) Formation of electron transport layer
[0120] The electron transport layer was produced by the solution coating method. Specifically, zinc acetate dihydrate (manufactured by Aldrich) was dissolved in 2-methoxyethanol at a concentration of 20 mg / ml, and then monoethanolamine (55 μl / ml) was added to prepare a solution. The solution was spin-coated on the ITO for the negative electrode at 2000 rpm (30 seconds), and the heat treatment was performed on a hot plate at 120° C. for 5 minutes to form an electron transport layer (see Table 1). The thickness of the electron transport layer after the heat treatment was 30 nm.
[0121] (2) Formation of the energy regulation layer at the lower end of the conduction belt
[0122] Cesium carbonate (manufactured by Ald...
Embodiment 2
[0134] The manufacturing method of the photoelectric conversion element of Example 2 is the same as that of Example 1, except that the heat treatment temperature when forming the electron transport layer is 300°C. The manufacturing method of the photoelectric conversion element of Example 3 is the same as that of Example 1, except that ZnMgO is prepared as the electron transport layer as follows.
[0135]
[0136] Zinc acetate dihydrate (manufactured by Aldrich) and zinc acetate tetrahydrate (manufactured by Aldrich) were dissolved in 2-methoxyethanol at a concentration of 15mg / ml and 5mg / ml respectively, and then monoethanolamine (5.5μl / ml) was added. , Stir for 2 hours. The above-mentioned ITO for negative electrode was spin-coated with the above-mentioned solution at 2000 rpm (30 seconds) and heat-treated at 300°C for 5 minutes on a hot plate to form an electron transport layer. The thickness of the electron transport layer after the heat treatment was 30 nm.
Embodiment 4~6
[0138] The UV blocking film (manufactured by King Works Co., Ltd., KU-1000100, with a transmittance of 1% or less in the wavelength range of 370 nm or less) was pasted on the negative glass substrate, except that it was the same as Examples 1 to 3, respectively.
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