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Multi-element high-entropy alloy film and preparation method thereof

An alloy thin film, multi-element high-entropy technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem that it is difficult to obtain single-phase solid solution high-entropy alloys, hinder the wide application of high-entropy alloys, and the preparation process. Complexity and other problems, to achieve the effect of stable sputtering rate, promotion of formation, and simple and easy operation process

Active Publication Date: 2014-07-02
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented process allows for precise control over how thin an alpha metal layer on top of another material will form during deposition without forming unwanted impurities that could affect its properties negatively impacted. It also provides quicker cool down times compared to previous methods while maintaining consistently good quality films.

Problems solved by technology

This technical problem addressed in this patents relates to finding ways for making strong but lightweight ceramics without compromising its strength at elevated temperatures. Current methods involve adding extra ingredients like silicon carbide powder into the starting mixture before sintering, resulting in poor quality products due to impurity levels within these added particles.

Method used

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  • Multi-element high-entropy alloy film and preparation method thereof
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  • Multi-element high-entropy alloy film and preparation method thereof

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preparation example Construction

[0032] The preparation method of a kind of multivariate high-entropy alloy film of the present invention is as follows:

[0033] 1) First, ultrasonically clean the silicon wafer substrate polished on one side in acetone, and then conduct ultrasonic cleaning with alcohol and deionized water in sequence;

[0034] 2) Then put the washed silicon substrate on the filter paper to dry, with the polished side facing up;

[0035] 3) Put the dried silicon wafer substrate and the high-entropy alloy bulk target into the sample stage and the evaporation source position in the vacuum chamber of the DC magnetron sputtering equipment, respectively;

[0036] 4) Close the vacuum chamber of the DC magnetron sputtering equipment, and evacuate the air pressure to less than 4×10 -4 Pa, rush into the argon with a volume percentage greater than or equal to 98% as the working gas;

[0037] 5) Under the working pressure of 0.3-1Pa, while the sample stage valve and the evaporation source valve are clo...

Embodiment 1

[0048] This embodiment adopts the method of DC magnetron sputtering mentioned in the present invention, has successfully prepared NiCrCoCuFe (the molar ratio of each element is Ni:Cr:Co:Cu:Fe=1:1:1:1:1 ) five-element high-entropy alloy thin film material. The thickness of the high-entropy alloy thin film material is uniform, and only a simple FCC solid solution phase is found in the thin film material, and the existence of the second phase is not found.

[0049] The preparation method of this high-entropy alloy thin film material, its steps are as follows:

[0050]1) First, put the single-side polished silicon wafer substrate in acetone for 10 minutes for ultrasonic cleaning with an ultrasonic power of 80w, and then perform ultrasonic cleaning with alcohol and deionized water in sequence. The cleaning time is 10 minutes, and the ultrasonic power is 80w;

[0051] 2) Then place the washed silicon wafer substrate on filter paper to dry, with the polished side facing up, and blow...

Embodiment 2

[0058] This embodiment adopts the method of DC magnetron sputtering mentioned in the present invention, has successfully prepared NiCrCoCuFe (the molar ratio of each element is Ni:Cr:Co:Cu:Fe=1:1:1:1:1 ) five-element high-entropy alloy thin film material. The thickness of the high-entropy alloy thin film material is uniform, and only a simple FCC solid solution phase is found in the thin film material, and the existence of the second phase is not found.

[0059] The preparation method of this high-entropy alloy thin film material, its steps are as follows:

[0060] 1) First, put the single-side polished silicon wafer substrate in acetone for 15 minutes for ultrasonic cleaning, with an ultrasonic power of 90w, and then perform ultrasonic cleaning with alcohol and deionized water in sequence. The cleaning time is 15 minutes, and the ultrasonic power is 90w;

[0061] 2) Then place the washed silicon wafer substrate on filter paper to dry, with the polished side facing up, and bl...

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Abstract

The invention discloses a multi-element high-entropy alloy film and a preparation method thereof. The multi-element high-entropy alloy film is a NiCrCoCuFe five-element high-entropy alloy film or a NiCrCoCuFeAl4.5 six-element high-entropy alloy film. The preparation method comprises the steps of ultrasonically washing a silicon wafer substrate with one polished surface through acetone, alcohol and de-ionized water in sequence; upwards air-drying the polished surface; putting the silicon wafer substrate and a high-entropy alloy block body target material onto a sample table and an evaporation source in a vacuum chamber of direct-current magnetron sputtering equipment respectively; vacuumizing the air pressure and filling argon gas; switching off valves of the sample table and the evaporation source for pre-sputtering; rotating the sample table, switching on the valves for sputtering, and taking out to obtain the multi-element high-entropy alloy film. According to the method, the sputtering rate is stable, so that the high-entropy alloy film material with uniform thickness can be obtained; the cooling rate is high, so that the formation of intermetallic compounds can be inhibited, and the formation of a single solid solution phase can be facilitated; the operation process is simple and feasible, and the application range of the high-entropy alloy material is extended.

Description

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Claims

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Application Information

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Owner ZHEJIANG UNIV
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