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A kind of semi-floating gate device and its preparation method

A technology of semi-floating gate devices and floating gates, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., to achieve the effects of increasing the reading rate, facilitating integration density, and reducing leakage

Active Publication Date: 2016-08-31
HUAWEI TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] Embodiments of the present invention provide a semi-floating gate device and a manufacturing method thereof, so as to solve the above-mentioned various defects existing in existing semi-floating gate transistors

Method used

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  • A kind of semi-floating gate device and its preparation method
  • A kind of semi-floating gate device and its preparation method
  • A kind of semi-floating gate device and its preparation method

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Embodiment Construction

[0041] Embodiments of the present invention provide a half-floating gate device and a manufacturing method thereof, so as to solve the above-mentioned various defects existing in the existing half-floating gate transistors.

[0042] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0043] In the following, specific examples will be used to describe in detail respectively.

[0044] Please...

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Abstract

The invention discloses a semi-floating gate device and a preparation method thereof, which are used to solve various defects existing in existing semi-floating gate transistors. The semi-floating gate device of the present invention includes: a semiconductor substrate with a first doping type; a protrusion formed on the surface of the semiconductor substrate; and a second doping type formed on one side of the semiconductor substrate. type of drain region, the drain region is connected to the convex body; a source region with a second doping type is formed on the other side of the semiconductor substrate, the source region passes through the channel region and The drain region is connected; a first layer of insulating film covering the channel region and the sidewall of the protrusion facing the source region; formed on the first layer of insulating film and the protrusion, A floating gate with a first doping type, the floating gate is connected to the drain region through the protrusion; a second layer of insulating film; a layer formed on the second layer of insulating film covering the floating gate and the control grid of the convex body.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semi-floating gate device and a preparation method thereof. Background technique [0002] Semiconductor memories are used in various electronic fields. Among them, non-volatile memory (NonvolatileMemory, NVM) can save data for a long time in the case of power failure. Floating Gate Transistor (FGT) is the mainstream structure of many variants of non-volatile memory. [0003] FGT is similar to Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in structure, which can be regarded as a change from a single gate dielectric layer in MOSFET to a charge storage layer embedded in two insulating layers (insulator). ) of the "sandwich" grid, such as figure 1 shown. Among them, the charge storage layer is called a floating gate because it is surrounded by an insulating layer. The amount of charge stored in the floating gate can adjust the magnitude of the transistor's ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L29/788H01L21/8247H10B69/00
CPCH01L29/42324H01L29/42336H01L29/66825H01L29/7881H01L29/40114
Inventor 杨喜超赵静张臣雄
Owner HUAWEI TECH CO LTD
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