Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

MEMS piezoresistive resonator

A resonator and vibrator technology, applied in impedance networks, electrical components, etc., can solve problems such as poor frequency stability and affecting frequency stability

Active Publication Date: 2014-06-18
中科芯未来微电子科技成都有限公司
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The dynamic resistance of the piezoresistive resonator in the prior art is only tens of ohms, which has great advantages compared with the capacitive resonator, but since the sensing current flows through the vibrator, the vibrator will self-heat and affect the stability of the frequency. Less frequency stability than capacitive resonators

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MEMS piezoresistive resonator
  • MEMS piezoresistive resonator
  • MEMS piezoresistive resonator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040]This embodiment provides a MEMS piezoresistive resonator, including: a substrate; at least a pair of input electrodes formed on the substrate, used to provide an AC voltage signal for the vibrator, so that the vibrator vibrates; an input bias a voltage electrode, formed on the substrate and located at the vibration node of the vibrator, for providing a DC bias voltage signal to the vibrator, so that the resistance of the vibrator responds to the change of the resistance of the vibrator caused by the AC voltage signal The generated sensing current flows through the vibrator; the output electrode is formed on the substrate and located at the node of vibration of the vibrator, and is arranged opposite to the input bias voltage electrode for responding to the sensing Measure the current, so as to output the frequency signal; the first anchor structure is used to support the vibrator on the input bias voltage electrode and transmit the DC bias voltage signal to the vibrator; t...

Embodiment 2

[0059] see figure 2 , is a schematic structural diagram of a MEMS piezoresistive resonator provided by an embodiment of the present invention. Such as figure 2 As shown, the resonator includes: a substrate, a first pair of input electrodes 21a, a second pair of input electrodes 21b, an input bias voltage electrode, an output electrode, a first anchor structure 22, a second anchor structure 23 and a vibrator 24, The vibrator 24 includes: a first region 241 through which the sensing current flows and a second region 242 through which the sensing current does not flow.

[0060] The similarities between this embodiment and the foregoing embodiment will not be repeated here. The difference is that the vibrator 24 further includes a hollowed out area 243 , and the hollowed out area 243 is located between the first area 241 and the second area 242 . The first pair of input electrodes 21a and the second pair of input electrodes 21b are evenly distributed in the circumferential di...

Embodiment 3

[0080] see Figure 7 , is a schematic structural diagram of another MEMS piezoresistive resonator provided by an embodiment of the present invention. Such as Figure 7 As shown, the resonator includes: a substrate, at least one pair of input electrodes, an input bias voltage electrode, an output electrode, a first anchor structure 72, a second anchor structure 73, and an oscillator 74, wherein the oscillator 74 includes: There is a first region 741 where the sensing current flows and a second region 742 where the sensing current does not flow. The vibrator 74 further includes a hollowed out area 743 located between the first area 741 and the second area 742 .

[0081] Optionally, the vibrator 74 has a symmetrical structure, wherein the hollowed out area 743 is a pair of symmetrical hollowed out areas, the second area 742 is located between the symmetrical hollowed out areas 743, and the first The area 741 is paired with the symmetrical hollow area 743 .

[0082] Further pr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an MEMS piezoresistive resonator which comprises a substrate, input electrodes, an input offset voltage electrode, output electrodes, a first anchor structure, a second anchor structure and a vibrator. The input electrodes are used for providing AC voltage signals for the vibrator so as to enable the vibrator to vibrate. The input offset voltage electrode is formed on the substrate and located on a vibrating wave node portion and is used for providing DC offset voltage signals for the vibrator so as to enable the sensing current to flow through the vibrator, wherein the sensing current is generated by resistance change of the vibrator due to response to the AC voltage signals. The output electrodes are located on the vibrating wave node portion and arranged opposite to the input offset voltage electrode and is used for responding to the sensing current and outputting frequency signals. The first anchor structure is used for sending the DC offset voltage signals to the vibrator. The second anchor structure is used for sending the sensing current to the output electrodes. The vibrator is arranged between the input electrodes and suspended above the substrate through the first anchor structure and the second anchor structure. The vibrator comprises a first region and a second region, wherein the sensing current flows through the first region and does not flow through the second region, so frequency instability caused by spontaneous heating can be reduced.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of oscillators, in particular to a MEMS piezoresistive resonator. Background technique [0002] In the field of clock and frequency control, quartz oscillators are generally used, which have excellent temperature stability and phase noise characteristics. However, as current clock products become more and more miniaturized, the shortcomings of quartz oscillators are becoming more and more prominent. Quartz oscillators are Off-chip components, difficulty in shrinking volume, incompatibility with silicon technology, difficulty in integration, and non-industrial standard packaging, etc., make manufacturers face the problems of high cost and low yield while providing thinner products. [0003] Micro Electro Mechanical System (MEMS) resonators are a type of resonators that have developed rapidly in recent years and are widely used to make radio frequency filters, oscillators, frequency count...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/24H03H9/02
Inventor 张乐欧文明安杰
Owner 中科芯未来微电子科技成都有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products