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Enhanced type, depletion type and current induction integrated VDMOS power device

A technology for current sensing and power devices, applied in the field of VDMOS power devices, can solve problems such as hindering product miniaturization, complex manufacturing process, and large occupied area, and achieve the effect of being conducive to miniaturization, low manufacturing cost and low cost

Active Publication Date: 2014-06-18
XIAMEN YUANSHUN MICROELECTRONICS TECH +2
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, VDMOS power devices are widely used in products such as LED drive power supplies, chargers, and power adapters, but the existing vertical double-diffused metal oxide field-effect devices are all independently packaged in these products, which not only takes up a large area, but also The manufacturing process is complicated and the cost is high
However, with the development of electronic device integration technology, independent packaging has hindered product miniaturization. Therefore, how to integrate enhancement-mode, depletion-mode and current-sensing VDMOS into one device through integration technology and ensure the stability of the device , Reliability is the demand of the market

Method used

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  • Enhanced type, depletion type and current induction integrated VDMOS power device
  • Enhanced type, depletion type and current induction integrated VDMOS power device

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Embodiment Construction

[0015] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0016] Such as figure 1 As shown, the present embodiment provides an enhanced, depleted and current-sensing integrated VDMOS power device, including an N-type substrate 2, and an N-type epitaxial layer 14 is arranged on the N-type substrate 2, and is characterized in that: The N-type epitaxial layer 14 is provided with an enhanced VDMOS5, a depletion-type VDMOS3, a current-sensing VDMOS6 and two isolation structures 4, wherein the three types of VDMOS devices share a drain, and the enhanced-type VDMOS and the current-sensing VDMOS share a gate, so The isolation structure 4 is respectively arranged between the sources of the enhancement VDMOS, the depletion VDMOS and the current sensing VDMOS. The gate of the enhanced VDMOS and the gate of the current sensing VDMOS are commonly connected to a common gate through a metal;

[0017] Please continue to see...

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Abstract

The invention relates to an enhanced type, depletion type and current induction integrated VDMOS power device. The enhanced type, depletion type and current induction integrated VDMOS power device comprises an N-type substrate, and an N-type epitaxial layer is arranged on the N-type substrate. The enhanced type, depletion type and current induction integrated VDMOS power device is characterized in that an enhanced VDMOS, a depletion type VDMOS and a current induction VDMOS are arranged on the N-type epitaxial layer, and isolation structures are arranged between the enhanced VDMOS, the depletion type VDMOS and the current induction VDMOS; the enhanced type, depletion type and current induction integrated VDMOS power device integrates the three VDMOS devices, is flexible and diverse in application and combination, can be applied to circuits such as LED driving power supplies, power adapters and chargers and facilitate system integration and system miniaturization, and also has the advantages of being low in cost and simple in manufacture control; the isolation structures are adopted between the three VDMOS devices, and therefore punch-through between the devices can be effectively avoided. The enhanced type, depletion type and current induction integrated VDMOS power device has the advantages of being good in compatibility, high in reliability, low in manufacturing cost, easy in industrialization and the like.

Description

technical field [0001] The invention relates to the technical field of VDMOS power devices, in particular to an enhanced, depleted and current-sensing integrated VDMOS power device. Background technique [0002] The vertical double diffused metal oxide field effect device VDMOS includes enhancement mode and depletion mode, which have the advantages of good switching characteristics and low power consumption; in addition, the vertical double diffused metal oxide field effect device is designed as a current sensing power MOSFET (SENSFET), current sensing power MOSFET can achieve higher efficiency, faster load current transient response and lower system cost than other solutions. Therefore, VDMOS power devices are widely used in products such as LED drive power supplies, chargers, and power adapters, but the existing vertical double-diffused metal oxide field-effect devices are all independently packaged in these products, which not only takes up a large area, but also The ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L27/02
CPCH01L27/0883H01L29/402H01L29/66712H01L29/7802H01L29/7815H01L2224/0603
Inventor 陈利高耿辉高伟钧
Owner XIAMEN YUANSHUN MICROELECTRONICS TECH
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