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GeSnn channel tunneling field effect transistor with source strain source

A tunneling field effect and transistor technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as difficulties and poor thermal stability of materials, and achieve the effect of increasing tunneling current and improving device performance

Inactive Publication Date: 2014-05-28
CHONGQING UNIV
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  • Claims
  • Application Information

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Problems solved by technology

However, the increase of Sn composition will make the quality and thermal stability of the whole material worse, and it is difficult to obtain GeSn with direct band gap only by increasing the composition of Sn

Method used

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  • GeSnn channel tunneling field effect transistor with source strain source
  • GeSnn channel tunneling field effect transistor with source strain source
  • GeSnn channel tunneling field effect transistor with source strain source

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Embodiment Construction

[0015] In order to help those skilled in the art understand the technical essence of the present invention more clearly, the structure and process realization of the present invention are described in detail below in conjunction with the accompanying drawings and embodiments:

[0016] see figure 1 and figure 2 The shown GeSn n-channel tunneling field effect transistor with active strain source, which includes:

[0017] An n channel 103, the material is single crystal GeSn, the general formula is Ge 1-x sn x (0≤ x ≤0.25), if Ge can be used 0.95 sn 0.05 ;

[0018] An insulating dielectric film 105 is grown on the channel, such as using H-k (high-k value) material hafnium dioxide H f o 2 ;

[0019] a gate electrode 104 covering the insulating dielectric film;

[0020] A source 101, the material is single crystal GeSn, the general formula is Ge 1-x sn x (0≤ x ≤0.25), if using Ge 0.95 sn 0.05 ;

[0021] A drain electrode 106, the material is single crystal GeSn, t...

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Abstract

The invention provides a GeSnn channel tunneling field effect transistor (10) with a source strain source. The GeSnn channel tunneling field effect transistor structurally comprises a GeSnn channel, a source electrode, a drain electrode, the source strain source, an insulating dielectric film and a gate electrode. The source strain source (102) grows in a source electrode area (101), the insulating dielectric film (105) grows on the GeSnn channel, and the insulating dielectric film is covered with a layer of gate (104). The lattice constant of the source strain source (102) is larger than that of the source electrode area (101), the strain on a channel area is formed, the strain is double-axis tensile strain in the yz-plane, and the strain is single-axis compression strain in the x direction. The strain enables n channel GeSn to be changed into a direct band gap from an indirect band gap, therefore, direct quantum tunneling is formed, tunneling currents are increased, and then the performance of the TFET is improved.

Description

technical field [0001] The invention relates to a GeSn n-channel TFET (Tunneling Field-Effect Transistor: Tunneling Field-Effect Transistor) with an active strain source. Background technique [0002] With the further development of integrated circuits, the further reduction of chip feature size, and the increase of the number of devices integrated on a single chip, power consumption has become an issue that people pay more and more attention to. According to ITRS data, when the feature size is reduced to the 32nm node, the power consumption will be 8 times the expected trend, that is, with the gradual reduction of the feature size, traditional MOS devices will not be able to meet the demand in terms of power consumption (Nature, vol479, 329-337, 2011). In addition, the reduction in MOSFET size faces the limitation of subthreshold slope at room temperature with a minimum of 60mv / decade. Compared with MOSFETs, tunneling field effect transistors based on tunneling effects do...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06
Inventor 刘艳韩根全王洪娟
Owner CHONGQING UNIV
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