Array substrate and preparation method and display panel

Abstract

The invention discloses an array substrate and a preparation method thereof and a display panel. The array substrate can reduce the leakage current of a thin film transistor and is used for improving the phenomena of flicker, crosstalk, residual images and the like of the display panel and improving display performance. The array substrate comprises a substratum substrate and grid lines, data lines and a plurality of pixel units which are arranged on the substratum substrate, wherein each pixel unit comprises a first oxide thin film transistor and pixel electrodes. The array substrate is characterized in that each pixel unit also comprises at least one second oxide thin film transistor which is connected in series with the first oxide thin film transistor; the pixel electrodes are connected with a drain electrode of the second oxide thin film transistor; a source electrode of the second oxide thin film transistor is connected with a drain electrode of the first oxide thin film transistor; a source electrode of the first oxide thin film transistor is connected with the data lines; and the second oxide thin film transistor is connected in series with the first oxide thin film transistor to increase off resistance between the pixel electrodes and the data lines. The embodiment of the invention is applied to the technical field of display.

Description

technical field [0001] The present invention generally relates to the technical field of liquid crystal display, and specifically relates to an array substrate, a manufacturing method thereof, and a display panel. Background technique [0002] Thin Film Transistor (TFT) leakage paths mainly include liquid crystal capacitor leakage and TFT leakage. The former leaks from the pixel electrode to the common electrode, and the latter leaks from the pixel electrode to the data line. Therefore, the leakage of the latter will be connected to the data line. related to the voltage. The leakage current conduction mechanism of the TFT device itself is mainly the hole current formed by channel thermionic emission, and the leakage current of traditional amorphous silicon products will increase dramatically under the condition of light. [0003] Indium Gallium Zinc Oxide (IGZO) is a new generation of material for the active layer of TFT. IGZO solves the defects of traditional TFT: the crys...

AI Technical Summary

Problems solved by technology

However, in the oxide TFT with this light-shielding structure, the source electrode 106 and the drain electrode 107 are directly in contact with the oxide active layer 104, which will cause holes in the oxide active layer 104 to flow into the source electrode 106 and the drain electrode 107, And the probability of electrons flowing into the active layer 104 from the source 106 and the drain 107 increases, thereby strengthening the leakage path of "drain → oxide TFT active layer → source", which is not conducive to maintaining the stored charge. Deterioration of panel quality

Images