Dielectric protective film of plasma display panel, preparation method of dielectric protective film, plasma display panel
A plasma display and dielectric protective film technology, which is applied in the direction of AC plasma display panels, discharge tube/lamp manufacturing, cold cathode manufacturing, etc., can solve the problems of low luminous efficiency and high discharge voltage of plasma display screens, and achieve low investment in transformation, High luminous efficiency, simple process to realize the effect
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Embodiment 1
[0032] The base material of the dielectric protective film is magnesium oxide, and the total dielectric protective film thickness is set to 800 nm, and 20 magnesium oxide layers are alternately arranged, and the thickness of each layer is 40 nm. An electrode material layer is formed on the front substrate, a dielectric layer is prepared on the electrode material layer, and then a dielectric protective film is formed on the dielectric layer: First, under oxygen-free conditions, the magnesium oxide layer is formed by electron beam evaporation, and the thickness is measured by crystals The instrument controls the thickness of the magnesium oxide layer; when the thickness reaches 20nm, open the oxygen valve to pass in 30SCCM oxygen to carry out the evaporation of the magnesium oxide layer under aerobic conditions; repeat the above steps to perform alternate evaporation of oxygen-free and aerobic , Get a dielectric protective film. After the previous substrate and the rear substrate...
Embodiment 2
[0034] The base material of the dielectric protective film is magnesium oxide, the electrode material layer is formed on the front substrate, the dielectric layer is prepared on the electrode material layer, and then the protective film is formed on the dielectric layer: After the front substrate enters the evaporation chamber, first, proceed to 30 The magnesium oxide layer is formed by ion beam evaporation under anaerobic conditions for 2 seconds; then, open the oxygen valve to pass in 45SCCM oxygen, and the oxygen pass for 30 seconds, then shut off the valve; repeat the above steps until the final thickness reaches 800nm, the evaporation is over . After the previous substrate and the rear substrate are combined, they are sealed by a sealing process, and then filled with working gas, and then subjected to a sophisticated test to measure the discharge voltage.
Embodiment 3
[0036] The base material of the dielectric protection film is Ca-doped magnesium oxide. The total dielectric protection film thickness is set to 1000 nm. The 34 magnesium oxide layers are arranged alternately, each with a thickness of 30 nm. An electrode material layer is formed on the front substrate. A dielectric layer is prepared on the electrode material layer, and then a protective film is formed on the dielectric layer: First, under oxygen-free conditions, the magnesium oxide layer is formed by electron beam evaporation, and the thickness of the magnesium oxide layer is controlled by a crystal thickness gauge; when the thickness reaches At 30nm, the oxygen valve is opened and 30SCCM oxygen is introduced to perform the vapor deposition of the magnesium oxide layer under aerobic conditions; the above steps are repeated to perform alternate vapor deposition of oxygen-free and aerobic to obtain a dielectric protective film. After the previous substrate and the rear substrate a...
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