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Leadless packaging structure and SOI absolute pressure sensitive device of leadless packaging structure

A packaging structure and sensitive device technology, which is applied in fluid pressure measurement by changing ohmic resistance, electric solid devices, semiconductor devices, etc., can solve problems such as the influence of absolute pressure sensitive devices, electrode system debonding failure, and easy leakage of silicone oil. Achieve strong overload resistance, excellent thermal conductivity, and improve the effect of electrical insulation

Active Publication Date: 2014-04-30
NO 49 INST CHINESE ELECTRONICS SCI & TECH GRP
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a leadless packaging structure and an SOI absolute pressure sensitive device using a leadless packaging structure; The system is disconnected and fails, or there is a problem that the absolute pressure sensitive device is affected by thermal stress

Method used

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  • Leadless packaging structure and SOI absolute pressure sensitive device of leadless packaging structure

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specific Embodiment approach 1

[0011] Embodiment 1: A leadless packaging structure, which is characterized in that it uses a solid insulating material, sinters the metallization layer on the surface of the solid insulating material at a high temperature, and uses nickel or Ag-Cu solder as a transition material to sinter with the metal shell to form a seal structure.

specific Embodiment approach 2

[0012] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the solid insulating material is Al 2 o 3 , SiC, BeO, TiO 2 , ZrO 2 , MgO, AlN, Si 3 N 4 Or BN and mixtures of all the above materials. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0013] Embodiment 3: This embodiment is different from Embodiment 1 or Embodiment 2 in that: the material of the metallization layer includes tungsten or molybdenum and a mixture of all the above materials. Others are the same as in the first or second embodiment.

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Abstract

The invention relates to a leadless packaging structure and an SOI absolute pressure sensitive device of the leadless packaging structure. The leadless packaging structure and the SOI absolute pressure sensitive device solve the problems that in the prior art, silicone oil is prone to leaking under high-temperature and high-pressure conditions, a metal lead easily breaks, an electrode system disconnects from a key and fails, and influences of thermal stress exist. According to the leadless packaging structure, a metallization layer is sintered on the surface of a solid insulating material, and the metallization layer and a metal tube shell are sintered to form a sealing structure through solder. According to the SOI absolute pressure sensitive device of the leadless packaging structure, the solid insulating material is fixed to a tube base through the metallization layer and the solder, a seal ring is arranged on the outer surface, which the lead penetrates out downwards in the tube base direction, of the solid insulating material, a multi-layer composite material, a glass-metal composite material and a borosilicate glass base are arranged on the outer surface, which the lead penetrates out upwards in the tube base direction, of the solid insulating material, a metal electrode is arranged at the top end of the lead, and a chip is arranged at the other end of the metal electrode.

Description

technical field [0001] The invention relates to a leadless packaging structure, and the invention also relates to a pressure sensitive device adopting the leadless packaging structure. Background technique [0002] There are mainly two packaging methods for existing SOI absolute pressure sensitive devices. One is to use the front side of the SOI silicon sensitive chip as the pressure sensing surface, which is sensitive to the high and low pressure signals formed by the inner and outer cavity, and outputs a strain proportional to the pressure difference. , forming two positive and negative strain regions; at the same time, due to the piezoresistive effect, the resistivity of the material will change accordingly, and the sensitive chip will output a voltage signal proportional to the measured pressure. By measuring the magnitude of the voltage signal , the pressure measurement can be realized; this packaging method requires wires (gold wire, silicon aluminum wire) to electrica...

Claims

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Application Information

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IPC IPC(8): G01L9/06H01L23/29H01L23/31
Inventor 苗欣吴亚林苗佳依张伟亮
Owner NO 49 INST CHINESE ELECTRONICS SCI & TECH GRP
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