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Chemical vapor deposition equipment

A technology of chemical vapor deposition and equipment, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of not being able to prepare ultra-large size body materials, etc., and achieve good vacuum tightness, reduced volume, and structure stable effect

Active Publication Date: 2014-04-30
SINOMA SYNTHETIC CRYSTALS (SHANDONG) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of this, the object of the present invention is to provide a chemical vapor deposition equipment capable of preparing super-large-sized bulk materials, so as to solve the technical problem that super-large-sized bulk materials cannot be prepared in the prior art

Method used

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Embodiment Construction

[0035] Various embodiments of the invention will be described in more detail below with reference to the accompanying drawings. In the various drawings, the same elements are denoted by the same or similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale.

[0036] Such as figure 2As shown, the chemical vapor deposition equipment for preparing ultra-large bulk materials in the present invention includes a housing 1 , a reaction system 2 and a heating element 3 located between the housing and the reaction system. The inside of the housing 1 is provided with the reaction system 2, the reaction system 2 includes a raw material supply device 4 and a reaction chamber 5, the raw material supply device 4 is, for example, a zinc tank, which provides chemical For depositing required raw materials, the heating element 3 is provided on the inner wall of the casing 1 outside the raw material supply device 4 and the reaction chamber ...

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Abstract

The invention relates to chemical vapor deposition equipment which comprises a shell, a reaction system, and a heating element positioned between the shell and the reaction system, wherein the reaction system is arranged in the shell, and comprises a raw material supply device and a reaction room; the heating element is arranged on the inner wall of the shell on the outer sides of the raw material supply device and the reaction room. The chemical vapor deposition equipment is characterized in that the shell comprises a shell main body and a door; an inner cavity is formed by surrounding of the shell main body and the door, and is a cuboid; the door can be opened or close one surface of the inner cavity. The chemical vapor deposition equipment, provided by the invention, can prepare materials with huge size, and realizes the preparation of the materials with huge size under the premise of possibly decreasing the volume; the single-surface door opening design enables the daily mounting and disassembly of internal components to be directly operated simply on the ground level; the control and use of a reaction furnace can be realized by less manpower; the chemical vapor deposition equipment satisfies the industrial large-scale production of preparing the materials with huge size by the CVD (Chemical Vapor Deposition) technology, improves the productivity, and reduces the production cost.

Description

technical field [0001] The invention relates to a chemical vapor deposition equipment, in particular to a chemical vapor deposition equipment for preparing ultra-large size body materials. Background technique [0002] CVD technology can realize the manufacture of various advanced materials, such as metal materials, ceramic materials, semiconductor materials, infrared optical materials, etc.; and can prepare tubes, thin films, powders, bulk materials, etc. Among them, it has unique advantages in the preparation of infrared optical materials such as CVDZnS and CVDZnSe. It can not only achieve high density, good purity, and good optical properties of the prepared materials, but also realize large-scale material preparation that cannot be achieved by other processes. [0003] figure 1 shows the reaction furnace 100 used in the conventional CVDZnS preparation process, the conventional CVDZnS n The preparation process of S is: put the raw material Z in the circular crucible con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44
Inventor 张福昌
Owner SINOMA SYNTHETIC CRYSTALS (SHANDONG) CO LTD
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