A method and device for monitoring etching rate uniformity

Abstract

The invention discloses a method and a device for etching rate uniformity monitoring in order to realize real-time monitoring on the etching rate uniformity of plasma in a cavity. The method comprises the following steps: acquiring the intensity value of a spectral signal of a reactant or product in an etched reaction cavity in real time; determining the starting time and the ending time corresponding to a change stage of the intensity value of the spectral signal of the reactant or product according to the intensity value of the spectral signal; determining the maximum and minimum values of the etching rate according to the starting time, the ending time and the preset thickness of an etched film; and determining the uniformity of the etching rate according to the maximum and minimum values of the etching rate.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor devices, in particular to a method and device for monitoring the uniformity of etching rate. Background technique [0002] In the field of semiconductor device manufacturing, especially in the field of patterning of display technology, etching technology (etchingtechniΔIue) is a method of removing the thin film layer that is not masked by the resist, so that the exact same pattern as that on the resist film is obtained on the thin film. craft. [0003] Generally, etching methods include two types of etching and wet etching. Etching mainly includes plasma etching. Plasma etching uses a high-frequency glow discharge reaction to activate the reactive gas into active particles, such as atoms or free radicals. These active particles diffuse to the part to be etched, react with the material to be etched, and form volatile products. be removed. [0004] During the etching process,...

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that it is impossible to monitor the uniformity of the etching rate of the etching reaction chamber in real time.

In addition, in the prior art, the uniformity of the etching rate in the reaction chamber is tested manually after etching, and the general test is completed within at least 2-3 hours, which requires a certain amount of labor costs

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