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2d/3d analysis for abnormal tools and stage diagnosis

An anomaly and tool technology, applied in the field of semiconductor processing systems, can solve problems such as difficult to determine abnormal tool and stage performance

Active Publication Date: 2017-04-12
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to determine abnormal tool and stage behavior between different tools in different steps

Method used

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  • 2d/3d analysis for abnormal tools and stage diagnosis
  • 2d/3d analysis for abnormal tools and stage diagnosis
  • 2d/3d analysis for abnormal tools and stage diagnosis

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Embodiment Construction

[0033] The present invention provides a multidimensional analysis flow to rank suspect tools and process steps in the absence of interference from other relevant factors or influences, such as processing in one step that may affect measurements in subsequent steps. Accordingly, the present invention provides a method of efficiently sequencing tools and process steps in the order of the anomalies demonstrated in each corresponding tool and process step.

[0034] Accordingly, the following description refers to the accompanying drawings, wherein like reference numerals are generally used to designate like elements throughout, the various drawings not necessarily being drawn to scale. In the following description, for purposes of explanation, numerous specific details are set forth to facilitate understanding. It will be understood, however, by those skilled in the art that one or more aspects described herein may be practiced with a lesser degree of these specific details. In o...

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Abstract

The present invention discloses a method for analyzing anomalies of a semiconductor processing system, providing an analysis of each process step of a plurality of process steps for each of a plurality of processed wafers and in a plurality of tools An analysis of variance was performed on the production history associated with each tool, and critical process steps were identified. A regression analysis is performed on multiple measurements of multiple wafers at each process step and key measurement parameters are determined. An analysis of covariance is performed on the key measurement parameters and key process steps, and the key process steps are sorted based on the f-ratio, wherein the abnormalities of the key process steps are sorted. Also, the plurality of tools associated with each of the critical process steps are ranked based on an orthogonal t ratio associated with the analysis of covariance, wherein the anomalies for each tool associated with the critical process steps are ranked. The present invention also provides 2D / 3D analysis for abnormal tool and stage diagnosis.

Description

technical field [0001] The present invention relates generally to the field of semiconductor technology, and more particularly, to semiconductor processing systems. Background technique [0002] In semiconductor manufacturing, a semiconductor wafer typically goes through many process steps, or stages, before a complete die is formed. For example, such process steps may include photolithography, etching, semiconductor doping, and deposition of various materials on the semiconductor wafer. The accuracy and precision of the process and the transitions between different process steps often directly affect the quality of the complete die. For example, deviations in the gate structure, imprecise doping concentrations, or excessively thick or thin dielectric layers can create unwanted leakage currents in transistors or delays in circuit operation. [0003] Further complicating the challenge is the desire of semiconductor manufacturers to maximize the number of dies produced throu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
CPCG03F7/70533G03F7/70616G05B23/024H01L22/00G06F30/00
Inventor 林俊贤陈瑞龙赵蕙韵牟忠一林进祥
Owner TAIWAN SEMICON MFG CO LTD
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