System and method for stimulating and predicting melt thermocapillary convection process

Abstract

The invention discloses a system and a method for stimulating and predicting a melt thermocapillary convection process and belongs to the technical field of semi-conductor materials. The system comprises a melt data acquisition module, a thermocapillary convection simulation and prediction module, a simulation and prediction result storage module and a result image display module, wherein the thermocapillary convection simulation and prediction module comprises a grid partition sub-module, a thermocapillary convection calculation sub-module and an interface recognition module. The method comprises the steps of acquiring geometric parameters of a melt liquid bridge area, medium physical parameters, physical parameters of an fluid on the side of an environment where the melt is located and initial parameters of a melt thermocapillary convection process; performing thermocapillary convection simulation and prediction; and classifying a velocity field, a temperature field, a flow field, a pressure field and two phase boundary positions, storing results in chronological order, and displaying the results in a form of a graph, a vector diagram or a cloud atlas in a classified manner. The system and the method can be used for predicting the development of internal thermocapillary convection in a crystal growth process as well as the distribution of the temperature field and the velocity field in a microgravity environment and under magnetic field control, and a prediction means is provided for preparing high-quality single crystals.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a system and method for simulating and predicting a melt thermal capillary convection process. Background technique [0002] Semiconductor crystals are the main basic materials of the semiconductor industry. However, natural crystals are far from meeting the needs of modern science and technology development in terms of variety, quantity and quality, thus promoting the rapid development of artificial crystals. The improvement of the performance of crystal materials and the development of new varieties of crystals depend to a large extent on the improvement, development and perfection of crystal growth methods. [0003] The melt growth method is currently the most commonly used and most important crystal growth method for industrial production of semiconductor single crystals. In the process of melt growth crystals, the solid is first heated and melted,...

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Problems solved by technology

[0008] At the same time, in terms of theoretical research, although there are many reports on numerical calculation and theoretical analysis, it is difficult to find accurate stability analysis and numerical simulation

An important reason is that the vast majority of studies have adopted a simplified model without considering the deformation of the free surface of the liquid bridge in the melting zone. The free surface of the liquid bridge in the melting zone is assumed to be a non-deformable cylindrical surface or determined by the fluid volume and the Young-Laplace equation Non-deformable surfaces, affecting the accuracy of research results

The fundamental reason is that when the numerical simulation method is used to capture the small migration of the free surface of the liquid bridge, the existing various moving interface tracking methods cannot meet the requirements under the microgravity level.

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