A HEMT gate leakage current separating structure and method based on capacitor structure

Abstract

The invention discloses a HEMT gate leakage current separating structure and method based on capacitor structure. The HEMT grid leakage current separating structure comprises two annular schottky gate capacitors with different areas. Each capacitor is configured in dual-end structure and comprises a gate electrode and an ohmic electrode. The radius of the gate electrode of the first capacitor is R1. The Schottky gate of the second capacitor is annular. The radius of the outer ring of the Schottky gate of the second capacitor is R1 while the radius of the inner ring of the Schottky gate of the second capacitor is 0.707R1. The two Schottky capacitors have same distance between the gate electrode and the Ohmic electrode, wherein the distance is equal to R2-R1. The method comprises using a conventional semiconductor parameter testing device to perform an electrical test on the two capacitors so as to achieve quantified separation of body leakage current and surface leakage current in the gate leakage current of a HEMT device. The HEMT gate leakage current separating structure and method have characteristics of simpleness and reliable results and can be widely used in material growth, device process optimization, and subsequent reliability assessment of the HEMT device.

Description

Technical field: [0001] The invention belongs to a HEMT gate leakage current separation structure and method based on a capacitance structure. Background technique: [0002] GaN materials have good electrical properties, such as wide band gap, high breakdown electric field, high thermal conductivity, corrosion resistance, radiation resistance, etc., and are known as the third-generation semiconductor materials, especially when compared with AlGaN and other materials. The formed heterostructure transistor (HEMT) has a high-concentration and high-mobility two-dimensional electron gas at the heterojunction interface, which has great advantages in the production of high-frequency, high-temperature, high-voltage, high-power electronic devices and microwave devices. and application prospects. In recent years, researchers at home and abroad have carried out extensive and in-depth research on HEMT devices, and have made great progress. [0003] Although GaN-based HEMT devices have...

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Problems solved by technology

This also brings certain difficulties to further research on material growth and device process optimization related to HEMT devices, as well as device failure mechanism research and performance evaluation.

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