Electron Beam Enhanced Decoupling Sources for Semiconductor Processing

Abstract

A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate plasma. The system also includes a plurality of fluid transfer passages fluidly connecting the plasma chamber and the processing chamber. The plurality of fluid delivery pathways are defined to supply reactive components of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control the energy distribution of the electrons within the processing chamber to thereby control the ion-to-radical density ratio within the processing chamber. In an embodiment, an electron beam source is defined to deliver an electron beam through the process chamber above and across the substrate support.

Description

Background technique [0001] Because the concentration of ions and free radicals in the plasma cannot be controlled separately, the plasma source used for thin film processing in the manufacture of semiconductor devices often cannot achieve the most ideal conditions for dry etching. For example, in some applications, ideal conditions for plasma etching can be achieved by increasing the concentration of ions in the plasma while maintaining the concentration of free radicals at a constant level. However, this independent control of radical concentration and ion concentration cannot be achieved using conventional plasma sources commonly used in thin film processing. Against this background, the present invention has been made. Contents of the invention [0002] In one embodiment, a semiconductor substrate processing system is disclosed. The system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also in...

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Problems solved by technology

However, this independent control of radical concentration versus ion concentration cannot be achieved using conventional plasma sources commonly used in thin film processing.

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