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Polishing pad and manufacturing method therefor

A manufacturing method and technology of grinding pads, which are applied in the field of grinding pads, can solve problems such as clogging, and achieve excellent grinding uniformity

Inactive Publication Date: 2014-02-26
FUJIBO HLDG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, there is still the problem of easy to cause blockage

Method used

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  • Polishing pad and manufacturing method therefor
  • Polishing pad and manufacturing method therefor
  • Polishing pad and manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0156] Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to these examples.

[0157] In each of Examples and Comparative Examples and Tables 1 to 4, "parts" means "parts by mass" unless otherwise specified.

[0158] In addition, each abbreviation of Table 1-Table 4 has the following meaning.

[0159] 2,4-TDI: 2,4-toluene diisocyanate

[0160] ·Hydrogenated MDI: 4,4'-methylene-bis(cyclohexyl isocyanate)

[0161] ・PTMG1000: Polytetramethylene glycol with a number average molecular weight of about 1000

[0162] DEG: diethylene glycol

[0163] MOCA: 3,3'-dichloro-4,4'-diaminodiphenylmethane

[0164] Trifunctional PPG3000: Trifunctional polypropylene glycol with a number average molecular weight of 3000

[0165] In addition, the so-called NCO equivalent of PP refers to "(mass (parts) of polyisocyanate compound + mass (parts) of polyol compound (C-1)) / [(number of functional groups per molecule of polyisocyanate compound × poly...

Embodiment 1～ Embodiment 4 and comparative example 2～ comparative example 5

[0172] Then, using solid MOCA, the ratio of each component was varied as shown in Table 1, and various polishing pads having different densities were produced.

Embodiment 1）

[0174] In Example 1, 2,4-TDI (286 parts) as a prepolymer of the first component and PTMG (714 parts) with a number average molecular weight of about 1000 were reacted, and the isocyanate content obtained by the reaction was 7.8%, An isocyanate group-containing urethane prepolymer having an NCO equivalent of 540 was heated to 55° C. and defoamed under reduced pressure. Solid MOCA which is a chain extender used as the second component was melted at 120° C. and defoamed under reduced pressure. For the aqueous dispersion of the third component, trifunctional PPG (42 parts) with a number average molecular weight of 3000 (42 parts), water (3 parts), and a catalyst (Toyocat ET, manufactured by Tosoh Co., Ltd.) were added, respectively. (1 part), silicone-based surfactant (SH-193, manufactured by Dow Corning) (1 part) and stirred and mixed at 35° C. for 1 hour, and defoaming was performed under reduced pressure. The weight ratio of the first component: the second component: the third...

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Abstract

Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a Young's modulus E in a range from 450 to 30000 kPa, and a density D in a range from 0.30 to 0.60 g / cm 3 .

Description

technical field [0001] The invention relates to a grinding pad. The present invention particularly relates to a polishing pad for chemical mechanical polishing (CMP) of semiconductor elements. Background technique [0002] Since the surface of materials such as silicon, hard disk, mother glass for liquid crystal displays, and semiconductor elements is required to have flatness, polishing using a free abrasive method using a polishing pad is performed. The free abrasive method is a method in which a slurry (polishing liquid) containing abrasive grains is supplied between the polishing pad and the non-abrasive object, and the grinding process is performed on the processed surface of the object to be polished. [0003] A polishing pad for semiconductor devices requires openings for holding abrasive grains, hardness for maintaining the flatness of the surface of the semiconductor device, and elasticity for preventing scratches on the surface of the semiconductor device. As a p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304B24B37/24C08G18/00C08G18/65C08J5/14
CPCC08J9/12C08G2101/0008C08G18/4854C08J2375/04C08G2101/0083C08G18/10B24B37/24B24B37/22H01L21/304C08G2110/0066C08G2110/0083C08G18/3814C08G18/4829C08J2207/00C08G2110/0008C08G18/48B24D3/26C08G18/00C08G18/65
Inventor 糸山光纪宫泽文雄
Owner FUJIBO HLDG
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