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The production method of molybdenum target

A production method and technology of molybdenum target, applied in the field of semiconductor manufacturing, can solve difficult problems

Active Publication Date: 2016-03-30
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The problem solved by the present invention is that the density of the molybdenum target produced by the existing powder metallurgy process is only about 93%, and it is difficult to achieve a full density of more than 99%. The molybdenum target produced by the existing powder metallurgy process The uniformity and grain size of the internal structure of the material cannot meet the increasingly demanding sputtering process; the purity of the molybdenum target produced by the existing powder metallurgy process cannot meet the increasingly high purity requirements of sputtering process; the size of the molybdenum target produced by the existing powder metallurgy process cannot meet the sputtering process with increasing size requirements

Method used

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  • The production method of molybdenum target

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Embodiment Construction

[0057] The inventors have found and analyzed that the existing powder metallurgy process commonly used hot pressing process (HotPressing, HP). In the vacuum hot-press furnace, the powder is compacted first, then vacuumed to the set value, followed by increasing the temperature and pressurizing until both the pressure and temperature reach the set value, heat preservation and pressure for a period of time, then cool with the furnace and come out of the furnace.

[0058] Molybdenum has a high melting point of 2600°C. The hot pressing process is used to sinter the molybdenum powder to form a fully dense (more than 99% dense) molybdenum target. The required pressure is greater than or equal to 100MPa. The hot pressing process is one-way pressure. On the one hand, it will exceed the pressure limit of the graphite mold, on the other hand, the grains of the molybdenum powder will be unevenly stressed in all directions, and the internal structure of the molybdenum target formed is not ...

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Abstract

Disclosed is a manufacturing method of a molybdenum target. The method comprises providing molybdenum powder; performing a first densification process on the molybdenum powder through isostatic pressing to obtain a first molybdenum target blank; putting the first molybdenum target blank into a sheath and vacuumizing the sheath; performing a second densification process on the first molybdenum target blank inside the sheath through cold isostatic pressing to form a second molybdenum target blank; after the second densification process, removing the sheath and performing a third densification process on the second molybdenum target blank through induction sintering to form a third molybdenum target blank; after the third densification process, rolling the third molybdenum target blank through hot rolling to form a fourth molybdenum target blank; after the hot rolling process, performing annealing on the fourth molybdenum target blank to obtain the molybdenum target. The manufacturing method of the molybdenum target can help produce full-density molybdenum targets, the uniformity of the internal organizational structure and the size, the purity and the surface dimension of grains of the molybdenum targets can well meet the ever-increasing requirements of the sputtering technology.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a molybdenum target. Background technique [0002] In the electronics industry, the display technology of flat-panel display devices continues to develop. The flat-panel display device formed by molybdenum-deposited emitters has the advantages of wide viewing angle, fast response time, and low power consumption, and has become the main force in the development of flat-panel display devices. Most flat panel display processes use vacuum sputtering to deposit molybdenum on the emitter. [0003] Vacuum sputtering is a process in which electrons accelerate to the substrate under the action of an electric field and collide with argon atoms, ionizing a large number of argon ions and electrons, the electrons fly to the substrate, and the argon ions accelerate to bombard the target under the action of an electric field A large number of target atoms ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F3/16C22F1/18C23C14/14C23C14/34
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽宋佳
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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