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LED patterned substrate with main patterns and secondary patterns and LED chip

A technology for patterning substrates and main patterns, applied in electrical components, circuits, semiconductor devices, etc., to achieve the effect of improving the light extraction rate of LEDs

Inactive Publication Date: 2014-01-29
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even in the most densely arranged pattern, there are still many gaps between adjacent patterns, and there is room for further improving the light extraction rate of patterned substrate LEDs in this part of the gap

Method used

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  • LED patterned substrate with main patterns and secondary patterns and LED chip
  • LED patterned substrate with main patterns and secondary patterns and LED chip
  • LED patterned substrate with main patterns and secondary patterns and LED chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] 1 is a schematic diagram of the LED chip of this embodiment, which consists of an LED patterned substrate 11 with primary and secondary double patterns, an N-type GaN layer 12, an MQW quantum well layer 13, and a P-type GaN layer 14 arranged in sequence.

[0027] Such as figure 2 As shown, in the LED patterned substrate with primary and secondary double patterns in this embodiment, the pattern on the substrate is composed of the main pattern 15 and the secondary pattern 16 arranged on the surface of the substrate; the main pattern and the secondary pattern are of the same type Pattern, that is, the cone pattern; where, such as Figure 2~3 As shown, the base circle radius r of the main pattern cone 1 1.5μm, inclination α 1 60°, the distance between the centers of adjacent main patterns is 5.0 μm, and the arrangement is hexagonal; the radius of the bottom circle of the sub-pattern cone is 0.7 μm, the inclination angle is 45°, and it is arranged in the gap of the main pa...

Embodiment 2

[0041] The LED chip of this embodiment is composed of an LED patterned substrate with primary and secondary double patterns, an N-type GaN layer, an MQW quantum well layer, and a P-type GaN layer arranged in sequence.

[0042] Such as Figure 4 As shown, in the LED patterned substrate with primary and secondary double patterns in this embodiment, the pattern on the substrate is composed of the main pattern 25 and the secondary pattern 26 arranged on the surface of the substrate; the main pattern 25 and the secondary pattern 26 are used for the main pattern Different patterns. Such as Figure 4~5As shown, the main pattern adopts a regular hexagonal pyramid pattern, and the inclination angle α of the regular hexagonal pyramid pattern 2 is 60°, side length a 2 is 1.0 μm, the distance between the centers of adjacent regular hexagonal pyramids is 3.2 μm, and the arrangement is hexagonal; for example Figure 4 , 6 As shown, the secondary pattern is a hemisphere, and the radius ...

Embodiment 3

[0056] The LED chip of this embodiment is composed of an LED patterned substrate with primary and secondary double patterns, an N-type GaN layer, an MQW quantum well layer, and a P-type GaN layer arranged in sequence.

[0057] Such as Figure 7 As shown, in the LED patterned substrate with primary and secondary double patterns in this embodiment, the pattern on the substrate is composed of a main pattern 35 and a secondary pattern 36 arranged on the surface of the substrate; the main pattern 35 and the secondary pattern 36 are used for the main pattern Different patterns. Such as Figure 7-8 As shown, the inclination angle α of the regular triangular pyramid used in the main pattern 3 is 45°, the side length of the regular triangular pyramid is a 3 is 2.0 μm, the distance between adjacent main patterns is 5.0 μm, and the arrangement is rectangular; for example Figure 7 , 9 As shown, the secondary pattern adopts a regular hexagonal pyramid, and the inclination angle α 4 ...

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Abstract

The invention discloses an LED patterned substrate with main patterns and secondary patterns. The patterns on the substrate are composed of the main patterns and the secondary patterns, and the main patterns and the secondary patterns are arranged on the surface of the substrate; the size of each secondary pattern is smaller than that of each main pattern; the secondary patterns are distributed in gaps between the main patterns. The invention further discloses an LED chip comprising the LED patterned substrate with the main patterns and the secondary patterns. Compared with a common LED patterned substrate, the LED patterned substrate with the main patterns and the secondary patterns has the advantages that the patterns on the substrate are denser, the LED chip emits more light beneficially, especially, the more light are emitted out of the top of the chip beneficially, the LED light extraction rate is increased greatly, and a new research and application direction is provided for patterned substrate technologies.

Description

technical field [0001] The invention relates to an LED and an LED chip, in particular to an LED patterned substrate and an LED chip with primary and secondary double patterns. Background technique [0002] In recent years, GaN-based LEDs have been widely used in traffic lights, LCD backlights, full-color displays, and general lighting due to their advantages such as high brightness, low energy consumption, and long life. However, there is a huge difference between the refractive index of GaN material (n=2.45) and air (n=1.0), and the critical angle of total reflection is only about 24 degrees, which leads to the significant total reflection of light inside the chip and cannot be emitted LED, which greatly reduces the light extraction rate of the LED. Later, improvement schemes were proposed for this problem, such as introducing Bragg reflection layer, photonic crystal, surface roughening and substrate patterning, etc. Among them, the patterned substrate technology can not ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20
CPCH01L33/20H01L33/007
Inventor 李国强林志霆何攀贵乔田周仕忠王海燕
Owner SOUTH CHINA UNIV OF TECH
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