Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of AlN ceramic base plate for microelectronic packaging

A technology for microelectronic packaging and ceramic substrates, which is applied in the field of microelectronic packaging materials to achieve the effects of uniform composition, uniform grain size, and excellent thermal properties

Inactive Publication Date: 2014-01-29
HEFEI UNIV OF TECH +1
View PDF8 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In the technology to be solved by the present invention, the sintering aid components in the AlN ceramics have poor compositional uniformity and distribution uniformity, resulting in Various structural and performance defects, as well as adverse effects caused by excessive sintering temperature, invented a preparation process for ceramic substrates. The components in the sintering aid are uniform, and the sintering aid is evenly distributed in AlN ceramics. And it can realize liquid phase sintering of AlN ceramics at a lower sintering temperature, refine AlN grains, and prepare AlN ceramic electronic packaging materials with excellent performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of AlN ceramic base plate for microelectronic packaging
  • Preparation method of AlN ceramic base plate for microelectronic packaging
  • Preparation method of AlN ceramic base plate for microelectronic packaging

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Firstly, the particle size is 1.2 μm and the specific surface area is 3.0 m 2 / g of high-purity AlN powder, the oxygen content is 1.2 wt%, and the components are: AlN 192.0 g, Y(NO 3 ) 3 ·6H 2 O 13.56g, Ca(NO 3 ) 2 4H 2 O 16.84 g;

[0026] Production process: Firstly, the aqueous nitrate is kept at 270°C for 30 minutes, and after dehydration treatment to remove the crystal water in the nitrate, put anhydrous nitrate and 100g alcohol into a ball mill tank, ball mill for 60 minutes, and then add 192.0g AlN powder Body, after ball milling for 180min. Dry in a constant temperature drying oven at 120°C for 2 hours, pass through a 60-mesh sieve; use a muffle furnace, heat the mixed powder at 670°C for 30 minutes for calcination, and pass the calcined powder through a 60-mesh sieve, add 18.5 g of solid paraffin, ℃ uniform heating in a water bath, stirring once every 3 minutes, and a total of 60 minutes in a water bath; after cooling to room temperature, pass through...

Embodiment 2

[0029] The preparation method of this example is the same as that of Example 1, except that the calcination temperature is 640°C and the sintering temperature is 1650°C.

[0030] Properties of prepared AlN ceramics: thermal conductivity is 114 W m -1 ·K -1 , and the three-point bending strength is 317 MPa.

[0031]

Embodiment 3

[0033] The preparation method of this example is the same as that of Example 1, except that the calcination temperature is 680°C and the sintering temperature is 1800°C.

[0034] Properties of prepared AlN ceramics: thermal conductivity is 109W·m -1 ·K -1 , The three-point bending strength is 328 MPa.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
specific surface areaaaaaaaaaaa
flexural strengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of an AlN ceramic base plate for microelectronic packaging, relates to the field of microelectronic packaging, and in particular relates to a new technology for adding AlN ceramic sintering aids and sintering at a low temperature. The preparation method comprises the following steps: selecting high-purity AlN powder, adding anhydrous yttrium nitrate and anhydrous calcium nitrate as sintering aids, adding an organic solvent, and mixing the materials through a wet method; drying, then calcining the mixed powder at 640-680 DEG C, adding a forming agent, uniformly mixing, performing compression molding, and sintering at 1600-1800 DEG C to prepare an AlN ceramic. According to the preparation method, the sintering aids are added in the form of anhydrous nitrates, so that the content uniformity and distribution uniformity of contents of the sintering aids in the AlN ceramic can be effectively improved, but also the sintering aid powder is tiny in particle size and high in activity, which is helpful for reducing the sintering temperature of the AlN ceramic. The AlN ceramic prepared by the invention is compact in structure, tiny and uniform in grain and excellent in mechanical property and thermology performance.

Description

technical field [0001] The technology of the invention relates to the field of microelectronic packaging materials, in particular to a method for preparing an AlN ceramic substrate with excellent performance for microelectronic packaging, which is mainly used for electronic packaging ceramics. Background technique: [0002] With the continuous development of microelectronics technology, the increase in the integration of electronic systems has led to an increase in power density, as well as an increase in the heat generated by the overall operation of electronic components and systems. However, traditional alumina ceramic substrate materials have been difficult to meet the increasing use of the electronic packaging industry. Require. [0003] AlN ceramics have the advantages of high thermal conductivity, non-toxic, harmless, good electrical insulation performance, low dielectric loss, thermal expansion coefficient matching with semiconductor silicon materials, etc., which ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/58C04B35/622
Inventor 汤文明崔嵩张浩郭军刘俊永耿春磊吴玉彪詹俊李建青
Owner HEFEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com