Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Sputtering ion gun

An ion gun and ion technology, applied in the field of sputtering ion guns, can solve the problems of direction deviation, low ion movement speed, low ionization efficiency, etc., and achieve the effects of simple structure, improved surface treatment effect, and convenient use.

Inactive Publication Date: 2013-12-25
DALIAN JIAOTONG UNIVERSITY
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The ionization efficiency is low, the ion movement speed is low, there is a direction deviation during ion spraying, and the treatment process cannot be controlled, so it is difficult to achieve the desired effect in the surface treatment of materials.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sputtering ion gun
  • Sputtering ion gun
  • Sputtering ion gun

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The bottom of a sputtering ion gun mainly includes a flange 41 , an argon gas introduction tube 43 , an electrode 44 , a BNC electrode support rod 45 , an electrode 46 , a BNC electrode 47 and an outer cover 42 . Wherein the argon gas inlet pipe 43 is connected with the CF16 flange 41 by welding. The inner diameter of the argon gas inlet pipe is 10 mm, and the CF16 flange 41 welded at the other end of the pipe is connected to the gas tank after passing through a gas flow fine-tuning valve. The five BNC electrodes at the bottom of the ion gun pass through the bottom end plate 49 leaving electrodes 44 inside the ion gun. In use, the electrodes 44 and 46 are correspondingly connected through cables. The electrode 46 has an electrode connector in the cavity of the airflow regulating device, and the electrode connector is connected to the electron acceleration grid electrode 28, the filament electrode 24, and the high-voltage electrode of the focusing lens 212 respectively ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a sputtering ion gun which is provided with an airflow direction regulating device, an argon ion generating device and a focusing lens, wherein the argon ion generating device is internally provided with an on-load voltage adjustable electronic accelerating grid mesh and a lamp filament correlated with a reference point position of the electronic accelerating grid mesh; one side wall of the electronic accelerating grid mesh is provided with a circular tube of a metal mesh; the electronic accelerating grid mesh is provided with a grid mesh anode at the front end and a grid mesh cathode at the rear end; the motion speeds of argon ions along the axial direction of the grid mesh are controlled through regulating a voltage loaded on the electronic accelerating grid mesh, thus the ion generating efficiency is regulated. The sputtering ion gun can be used alone during surface etching or deep analysis, and can be used for obtaining an improved surface treatment effect and ensuring that a surface treatment process is controllable. The ion sputtering and vacuum annealing can be adopted for performing repeated circular treatment during sample surface cleaning treatment or surface reconstruction. The material of the whole set of ion gun completely meets the requirement for use in an ultrahigh-vacuum environment, and can resist to baking at high temperature of over 200 DEG C.

Description

technical field [0001] The invention relates to a sputtering ion gun, which relates to the electronic optics or ion optics device of the patent classification number H01 basic electrical component H01J discharge tube or discharge lamp H01J3 / 00 commonly used in two or more basic types of discharge tubes or lamps Parts or parts of the ion trap H01J3 / 04 ion gun. Background technique [0002] In current scientific research and engineering applications, surface science is playing an important role, and it is a basic link in the synthesis of new materials and the analysis of physical and chemical properties of materials, especially in the preparation of nanoscale materials and nanomanufacturing. . Obtaining and controlling surface structure is the basis of surface science and the premise of nanotechnology. Typical surface treatment methods include dissociation, annealing and ion sputtering, and annealing and ion sputtering are almost the standard configurations of surface analys...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/305
Inventor 臧侃董华军郭方准孔一涵康凯
Owner DALIAN JIAOTONG UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products