Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Method for Measuring Mask Plate and Overlay Accuracy

A technology of overlay accuracy and measurement method, which is applied in the field of measurement of mask plate and overlay accuracy, and can solve problems such as uncontrollable overlay accuracy

Active Publication Date: 2016-07-13
SEMICON MFG INT (SHANGHAI) CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for measuring mask plate and overlay accuracy, so as to solve the problem in the prior art that the overlay accuracy between exposure units of the first layer after exposure is uncontrollable

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Method for Measuring Mask Plate and Overlay Accuracy
  • A Method for Measuring Mask Plate and Overlay Accuracy
  • A Method for Measuring Mask Plate and Overlay Accuracy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Such as image 3 As shown, this embodiment provides a mask plate 300, specifically, including a pattern area 302 and a peripheral area 301; the peripheral area 301 has a plurality of first marks A and a plurality of second marks B for alignment , wherein the first mark A and the second mark B have different sizes and / or shapes. In this embodiment, the first mark A and the second mark B have the same shape but different sizes. Specifically, the first mark A and the second mark B are rectangles with different sizes (sizes). In other embodiments of the present invention, the first mark A and the second mark B can also be in other shapes , for example: triangle, rhombus, etc., which are not limited in this application. There are 2 each of the first mark A and the second mark B. As shown in the figure, the order of the first mark A and the second mark B is AABB clockwise. Wherein, the centers of the first mark A and the second mark B on the opposite side are collinear, a...

Embodiment 2

[0035] Such as Figure 5 As shown, this embodiment provides a mask plate 500, specifically, including a pattern area 502 and a peripheral area 501; the peripheral area 501 has a plurality of first marks A and a plurality of second marks B for alignment , wherein the first mark A and the second mark B have different sizes and / or shapes. In this embodiment, the first mark A and the second mark B have the same shape but different sizes. The first mark A and the second mark B are 4 each. As shown in the figure, the first marks A and the second marks B are arranged at intervals. A first mark A and a second mark B are respectively distributed around the peripheral area 501 . Wherein, each first mark A / second mark B is collinear with the center of the second mark B / first mark A on the same side and the second mark B / first mark A on the opposite side, as shown in the figure, the first The center of the second mark B is collinear with the first mark A on the same side and the first...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for measuring the accuracy of a mask plate and overlay. The peripheral area of ​​the mask plate has a plurality of first marks A and second marks B, so that after the exposure of the entire wafer is completed, the peripheral area of ​​each exposure unit will intersect, so that the first mark A and the second mark B of one exposure unit will be nested respectively with the second mark B and the first mark A of the adjacent exposure unit, and on this basis, the nested first mark will be measured The relationship between A and the second mark B can determine the overlay accuracy between the exposure units of the first layer, so as to better grasp the initial condition of the product, and the measured overlay accuracy between the exposure units of the first layer The advanced process control system is uploaded, which can grasp the overlay accuracy between exposure units of subsequent layers and the overall status of this series of products, which is very in line with actual production needs.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a mask plate and a method for measuring overlay accuracy. Background technique [0002] The manufacturing of integrated circuits is to map a series of circuit diagrams into multiple material layers by appropriate methods, and each layer has a certain physical relationship. Then, each layer must achieve alignment with the previous layer within a certain range, that is, the inter-field overlay accuracy. At the same time, each layer has multiple exposure units after exposure, and the distance between each exposure unit The relationship between exposure units, that is, the overlay accuracy (intra-fieldoverlay) between exposure units can also affect the quality of the product. With the development of large-scale integrated circuit technology, when the feature size (CD) is reduced to 32nm node and smaller, the overlay accuracy (overlay) has gradually become a bottleneck...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/42G03F7/20G03F9/00H01L21/66
Inventor 舒强黄宜斌
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products