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Method for purifying and separating chlorosilane from polysilicon tail gas

A technology for purification and separation of chlorosilanes, applied in the direction of halogenated silanes, halogenated silicon compounds, etc.

Active Publication Date: 2013-12-11
新疆新特新能材料检测中心有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

The traditional separation of impurities in trichlorosilane is purified by rectification, but it requires huge equipment to achieve

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  • Method for purifying and separating chlorosilane from polysilicon tail gas

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Embodiment Construction

[0021] A method for purifying and separating chlorosilanes in polysilicon tail gas, comprising the steps of:

[0022] Step 1. Tail gas from reduction reaction, hydrogenation reaction, and synthesis reaction in polysilicon production contains hydrogen, trichlorosilane, silicon tetrachloride, dichlorodihydrosilane, and hydrogen chloride. The tail gas enters the inlet of polysilicon tail gas cooling device 1 and is circulated The water is cooled, and the gas-liquid mixture enters the gas-liquid separation tank 2.

[0023] Step 2, the tail gas containing chlorosilane enters the gas-liquid separation tank 2, and the liquid chlorosilane is separated from the uncondensed tail gas, and the uncondensed tail gas is output from the upper outlet of the gas-liquid separation tank 2;

[0024] Step 3: The chlorosilane output from the outlet of the lower part of the gas-liquid separation tank 2 is pressed into the rectification tower A4 through the chlorosilane delivery pump 3, the tower kett...

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Abstract

The invention relates to a tail gas purifying technology in polysilicon production. A single rectifying method is traditionally adopted to separate impurities from trichlorosilane and needs a large apparatus and a high running cost. The invention provides a purifying method combining a polysilicon reduction reaction with a rectification, hydrolysis rectification and adsorption technology. The purifying method provided by the invention comprises the following steps: cooling tail gas, rectifying condensed trichlorosilane in a rectifying tower, allowing obtained trichlorosilane to enter a hydrolysis rectifying tower, allowing condensed partial trichlorosilane to enter an adsorption column, allowing purified trichlorosilane to enter a trichlorosilane separation tower, collecting a trichlorosilane product at the top of the trichlorosilane separation tower, allowing discharged silicon tetrachloride to enter the rectifying tower for purification, and collecting a silicon tetrachloride product at the bottom of the rectifying tower. The method provided by the invention has the advantages of apparatus simplification, low running cost, and reduction of the polysilicon production cost by 10%.

Description

technical field [0001] The invention belongs to the technical field of purification and separation of polysilicon tail gas, and specifically relates to the technical field of purification and separation of produced chlorosilanes. Background technique [0002] Polycrystalline silicon is the main raw material for the manufacture of silicon polished wafers, solar cells and high-purity silicon products, and is the most important and basic functional material for the semiconductor industry, electronic information industry, and solar photovoltaic cell industry. According to the classification of purity, polysilicon can be divided into metallurgical grade, solar grade and electronic grade. The production methods of high-purity polysilicon include: improved Siemens method, silane method, fluidized bed method, and metallurgical method. With the large-scale development and utilization of green energy solar energy, polysilicon, the raw material of photovoltaic cells, has become more a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107
Inventor 陈朝霞
Owner 新疆新特新能材料检测中心有限公司
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