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A zinc oxide nano-pencil array electrode and its preparation method and application

A zinc oxide nanometer and array electrode technology, applied in the field of photoelectrochemistry, can solve the problems of low photoelectric efficiency, difficulty in efficiently utilizing sunlight, etc., and achieve the effects of low cost, inhibition of recombination, and mild conditions

Active Publication Date: 2016-04-06
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to solve the technical problems that current ZnO photoelectric anode materials are difficult to efficiently utilize sunlight and have low photoelectric efficiency, and provides a zinc oxide nano-pencil array electrode and its preparation method and application

Method used

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  • A zinc oxide nano-pencil array electrode and its preparation method and application
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  • A zinc oxide nano-pencil array electrode and its preparation method and application

Examples

Experimental program
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Effect test

Embodiment 1

[0035] (1) Preparation of ZnO seed layer

[0036] ①The FTO conductive glass was sonicated in deionized water, acetone and ethanol solution for 10 minutes successively, washed with deionized water, and dried for use;

[0037] 2. The ethanolic solution of zinc acetate dihydrate of 5mmol / L is prepared: 0.0548g of zinc acetate dihydrate is mixed with 50ml of absolute ethanol, and stirred until completely dissolved to obtain the ethanolic solution of zinc acetate dihydrate of 5mmol / L;

[0038] ③ Evenly drop the zinc acetate dihydrate ethanol solution onto the FTO conductive glass, then dry, and repeat the above operation 10 times;

[0039] ④ The above substrate is calcined in an air atmosphere for 30 minutes at 350° C. to obtain a ZnO seed layer.

[0040] (2) Preparation of ZnO nanorod arrays

[0041] ①Preparation of Zn(NO 3 ) 2 ·6H 2 A mixed aqueous solution A of O and HMTA, in which Zn 2+ The concentration of HMTA and 50mmol / L;

[0042] ②Place the FTO conductive glass coat...

Embodiment 2

[0055] (1) The preparation of the ZnO seed layer is the same as that of Example 1.

[0056] (2) The preparation of ZnO nanorod arrays is the same as that in Example 1.

[0057] (3) Preparation of ZnO nanopencil arrays

[0058] ① Prepare a mixed aqueous solution B of zinc source and ascorbic acid, in which Zn(NO 3 ) 2 ·6H 2 The concentrations of O and HMTA were 10 mmol / L, and the concentration of ascorbic acid was 0.375 mmol / L;

[0059] ②Place the FTO conductive glass with ZnO nanorod arrays in mixed solution B, place the side with ZnO nanorod arrays facing down, immerse it in the solution and close to the liquid surface, and react at 90°C for 4 hours ZnO nanopencil arrays were prepared;

[0060] ③ After the reaction, the FTO conductive glass was taken out, rinsed with deionized water, and dried.

[0061] The experimental results show that the diameter of the backbone nanorods of the ZnO nanopencil is 100-150nm and the length is 1.5-2μm; the diameter of the tip of the ZnO...

Embodiment 3

[0064] (1) The preparation of the ZnO seed layer is the same as that of Example 1.

[0065] (2) Preparation of ZnO nanorod arrays

[0066] ①Preparation of Zn(NO 3 ) 2 ·6H 2 A mixed aqueous solution A of O and HMTA, in which Zn 2+ The concentration with HMTA is 40mmol / L;

[0067] ②Place the FTO conductive glass coated with the ZnO seed layer in the mixed solution A, place the side coated with the ZnO seed layer down, immerse it in the solution and close to the liquid surface, and react at 85°C for 2 hours. ZnO nanorod arrays;

[0068] ③ After the reaction, the FTO conductive glass was taken out, rinsed with deionized water, and dried.

[0069] (3) Preparation of ZnO nanopencil arrays

[0070] ① Prepare a mixed aqueous solution B of zinc source and ascorbic acid, in which Zn(NO 3 ) 2 ·6H 2 The concentration of O and HMTA is 5mmol / L, and the concentration of ascorbic acid is 0.1875mmol / L;

[0071] ②Place the FTO conductive glass with ZnO nanorod arrays in mixed solutio...

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Abstract

The invention discloses a zinc oxide nanopencil array electrode and a preparation method and application thereof. According to the zinc oxide nanopencil array electrode, ZnO needle-like tips are grown on the tips of ZnO trunk nanorods; the preparation method comprises three steps, i.e. preparation of a ZnO seed layer, preparation of a ZnO nanorod array and preparation of a ZnO nanopencil array. A liquid phase synthesis method is adopted by the zinc oxide nanopencil array electrode, conditions are mild, operation is easy, and the cost is low; the ZnO nanopencil structure can increase the density of photoinduced electron-hole pairs and the intensity of photoinduced current, the photocurrent density is 1.14mA / cm<2> when applied voltage is 1V vs Ag / AgCl, and is two times higher than the photocurrent density of ZnO nanorods with the same size, so that the photocatalytic water splitting efficiency of the material is increased, and therefore the ZnO nanopencils can be applied in the field of hydrogen production by photocatalytic water splitting in photoelectrochemical cells as photoelectric anode material.

Description

technical field [0001] The invention relates to the technical field of photoelectrochemistry, in particular to a nanorod array electrode and a preparation method thereof. Background technique [0002] Hydrogen energy has received extensive attention today due to its high-energy cleanliness and other advantages in the increasingly depleted fossil energy; solar energy occupies a pivotal position in energy planning due to its inexhaustible, clean and pollution-free advantages. As a new type of hydrogen production method, solar photoelectrochemical cell splitting water to produce hydrogen has truly achieved no pollution to the environment and rational utilization of energy. As an n-type semiconductor oxide, zinc oxide (ZnO) has attracted much attention due to its many advantages, such as strong structure and morphology designability and low cost. However, the photogenerated electron-hole recombination of ZnO is extremely fast under illumination conditions, and the photocatalyti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/042H01G9/042H01G9/20H01G9/048H01M14/00B82Y30/00B82Y40/00
CPCY02E10/50
Inventor 巩金龙吕睿王拓苏凤莉张鹏
Owner TIANJIN UNIV
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