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Technology capable of improving tension of main grid of photoinductive electroplating battery

A light-induced electroplating and busbar technology, which is applied in the direction of sustainable manufacturing/processing, circuits, electrical components, etc., can solve the problem of poor pulling force at the welding part of the busbar, the impact of the electroplating grid line battery market, and desoldering at the busbar, etc. problem, to achieve good ohmic contact and adhesion, good pull-off force, and low unit consumption

Inactive Publication Date: 2013-11-13
泰州德通电气有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, with the deepening of mass production, it was found that the tension of the main grid welding part of the electroplated grid battery is not very good, especially when it is packaged into components, after a series of component aging tests, it is found that the desoldering of the main grid is serious. Bad impact on the market for plated grid cells

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Clean the silicon wafer, remove the damaged layer, and make texture; put the silicon wafer into a tubular diffusion furnace for diffusion, the resistance after diffusion is 80Ω / port, and the junction depth is 0.3μm; remove the phosphosilicate glass from the diffused silicon wafer and Remove the back junction; deposit a silicon nitride passivation anti-reflection layer on the surface of the emitter, and screen-print the back electrode and the back electric field. Use corrosion slurry or laser slotting, activate the slot with a lower concentration of HF, then electroplate a layer of thin nickel with a thickness of about 2um as a primer, sinter at 300°C for 3 minutes in a low-temperature oxygen-containing 3% environment, and finally electroplate copper and silver. After drying, the test busbar tension is 1.8N-2.4N, unqualified, and the electrical performance is good.

Embodiment 2

[0019] Clean the silicon wafer, remove the damaged layer, and make texture; put the silicon wafer into a tubular diffusion furnace for diffusion, the resistance after diffusion is 80Ω / port, and the junction depth is 0.3μm; remove the phosphosilicate glass from the diffused silicon wafer and Remove the back junction; deposit a silicon nitride passivation anti-reflection layer on the surface of the emitter, and screen-print the back electrode and the back electric field. Use corrosion paste or laser slotting, activate the slot with a lower concentration of HF, then electroplate a layer of thin nickel with a thickness of about 2um as a primer, then print 0.04g of low-temperature silver paste at the position of the main grid, bake at 120-200°C for 10min, and then Sinter at 280°C for 3 minutes in a low-temperature environment containing 3% oxygen, and finally electroplate copper and silver. After drying, the test busbar tension is 2.4N-2.9N, barely qualified, and the series connect...

Embodiment 3

[0021] Clean the silicon wafer, remove the damaged layer, and make texture; put the silicon wafer into a tubular diffusion furnace for diffusion, the resistance after diffusion is 80Ω / port, and the junction depth is 0.3μm; remove the phosphosilicate glass from the diffused silicon wafer and Remove the back junction; deposit a silicon nitride passivation anti-reflection layer on the surface of the emitter, and screen-print the back electrode and the back electric field. Use corrosion paste or laser slotting, activate the slot with a lower concentration of HF, then electroplate a layer of thin nickel with a thickness of about 2um as a primer, then print 0.05g of low-temperature silver paste at the position of the main grid, bake at 120-200°C for 10min, and then Sinter at 300°C for 3 minutes in an environment containing 3% oxygen, and finally electroplate copper and silver. After drying, the test busbar tension is 4.5N-5N, which is qualified and the electrical performance is good...

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Abstract

The invention discloses a technology capable of improving tension of a main grid of a photoinductive electroplating battery. The technology comprises the following steps: a, taking a battery piece of finishing silicon nitride in preceding and printing and sintering at the back, and selectively corroding the surface of the battery through corrosion slurry or laser grooving to provide a seed layer; b, activating the front of the battery piece after grooving with HF with lower concentration and plating a layer of thin nickel as a base layer; c, silk-screen printing a layer of low temperature silver paste on the main grid position and drying; d, sintering in a sintering furnace to form well ohmic contact; and e, forming a complete front grid line with copper plating and silver plating. According to technology, the using unit consumption of the used low temperature silver paste 'RuXing' 33-750 is lower, so that excellent ohmic contact and cohesive force can be guaranteed during low temperature sintering, and the quality of the nickel layer can not be affected during sintering, and as a result, good pulling-out force of the front main grid is guaranteed finally.

Description

technical field [0001] The invention relates to the field of solar cell preparation, in particular to a process capable of adjusting the main grid tension of light-induced electroplating cells. Background technique [0002] At present, as a new grid line technology, light-induced electroplating cells can reduce the area of ​​the grid line and increase the current, because the better ohmic contact of the plated grid line can also reduce the series connection and increase the fill factor. [0003] However, with the deepening of mass production, it was found that the tension of the main grid welding part of the electroplated grid battery is not very good, especially when it is packaged into components, after a series of component aging tests, it is found that the desoldering of the main grid is serious. It has had a bad influence on the market of electroplated grid wire batteries. Contents of the invention [0004] The technical problem to be solved by the present invention ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 费存勇初仁龙鲁伟明王志刚李省
Owner 泰州德通电气有限公司
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