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Copper zinc tin sulfide (CZTS) flexible solar cell and preparation method thereof

A flexible solar cell and flexible substrate technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem of low efficiency of CZTS flexible solar cells and achieve high efficiency

Active Publication Date: 2013-11-13
SHENZHEN INST OF ADVANCED TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Based on this, it is necessary to provide a CZTS flexible solar cell with higher efficiency to solve the problem of low efficiency of the existing CZTS flexible solar cell

Method used

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  • Copper zinc tin sulfide (CZTS) flexible solar cell and preparation method thereof
  • Copper zinc tin sulfide (CZTS) flexible solar cell and preparation method thereof
  • Copper zinc tin sulfide (CZTS) flexible solar cell and preparation method thereof

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preparation example Construction

[0044] see figure 2 , A method for preparing a CZTS flexible solar cell in an embodiment includes the following steps S110 to S150.

[0045] Step S110: providing a rigid substrate, and preparing a temporary back electrode layer stacked on the rigid substrate.

[0046] Please also see image 3 , the rigid substrate 80 is preferably soda lime glass. After the rigid substrate 80 is cleaned and dried, molybdenum or aluminum is sputtered onto the clean and dry rigid substrate 80 by sputtering to form a temporary back electrode layer 90 stacked on the rigid substrate 80 .

[0047] The thickness of the temporary back electrode layer 90 is 800 nm.

[0048] Step S120: Prepare an absorbing layer stacked on the temporary back electrode layer, the absorbing layer is a copper zinc tin sulfur layer or a copper zinc tin selenium layer.

[0049] The absorption layer 20 is a copper zinc tin sulfur layer or a copper zinc tin selenium layer. The step of preparing the absorption layer 20 in...

Embodiment 1

[0092] Preparation of CZTS flexible solar cells

[0093] 1. Preparation of copper zinc tin selenium layer by co-evaporation method

[0094] 1. Preparation of copper zinc tin selenium thin film precursor

[0095] Soda-lime glass is used as a rigid substrate, and a temporary back electrode layer with a thickness of 800nm ​​is plated on the rigid substrate. The rigid substrate coated with a temporary back electrode layer is placed on the MBE sample stage, so that the temporary back electrode layer faces For the evaporation source furnace, turn on the rotary switch of the sample stage, and set the temperatures of the Cu source furnace, ZnSe source furnace, Sn source furnace, Se source furnace and sample stage to 1210°C, 765°C, 1140°C, 210°C, and 200°C, respectively. Open Cu source furnace baffle plate, ZnSe source furnace baffle plate, Sn source furnace baffle plate and Se source furnace baffle plate, vapor deposition for 720 seconds, obtain copper zinc tin selenium thin film pre...

Embodiment 2

[0118] Preparation of CZTS flexible solar cells

[0119] 1. Preparation of copper-zinc-tin-sulfur thin films by co-sputtering

[0120] 1. Preparation of CuZnSnS thin film precursor

[0121] Soda-lime glass is used as a rigid substrate, and a temporary back electrode layer with a thickness of 800nm ​​is plated on the rigid substrate. The rigid substrate coated with a temporary back electrode layer is placed on the magnetron sputtering sample stage, so that the temporary back electrode layer The electrode layer faces the substrate baffle, turn on the rotary switch of the sample stage, set the power of Cu target, ZnS target and SnS2 target to 60w, 75w and 70w respectively, and open the Cu target baffle, ZnS target baffle and SnS2 target at the same time. 2 The target baffle was sputtered for 1 hour to obtain a copper-zinc-tin-sulfur thin film precursor with a composition ratio of Cu:Zn:Sn:S=1.8:1.1:1.3:3.9 and a thickness of 1 μm.

[0122] 2. High temperature annealing

[0123...

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Abstract

The invention relates to a copper zinc tin sulfide (CZTS) flexible solar cell and a preparation method thereof. The CZTS flexible solar cell comprises a back electrode layer, an absorbing layer, a buffer layer, a window layer, a transparent electrode layer, an adhesive layer and a flexible substrate which are all sequentially laminated. The absorbing layer is a copper zinc tin sulfide layer or a copper zinc tin selenium layer. According to the CZTS flexible solar cell with an upper substrate structure, a mature preparation process of the solar cell with a lower substrate structure can be adopted to enable various function layers to be laminated on a rigid substrate to obtain a device high in efficiency, the device is transferred to the flexible substrate through a substrate transfer method, the inherent shortcoming that the function layers directly grow on the flexible substrate is overcome, and the efficiency in manufacturing the CZTS flexible solar cell is high.

Description

technical field [0001] The invention relates to the technical field of photovoltaic devices, in particular to a CZTS flexible solar cell and a preparation method thereof. Background technique [0002] Copper zinc tin sulfur (Cu 2 ZnSnS 4 ) and CuZnSnSe (Cu 2 ZnSnSe 4 ) has a band gap that matches the solar spectrum very well and a high absorption coefficient, and its elements are rich in sources, low in price, and free of toxic materials, so it is very suitable as a light-absorbing layer material for solar cells. Copper-zinc-tin-sulfur thin-film and copper-zinc-tin-selenium thin-film solar cells (collectively referred to as CZTS solar cells) have become a hot research field in the field of photovoltaics today, and are likely to be the mainstream products of high-efficiency, low-cost, and non-toxic photovoltaic cells in the future. [0003] The main preparation process of CZTS solar cells is to prepare the precursor layered on the substrate by magnetron sputtering, co-eva...

Claims

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Application Information

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IPC IPC(8): H01L31/06H01L31/02H01L31/18H01L21/683
CPCY02E10/50Y02P70/50
Inventor 程冠铭杨春雷鲍浪冯叶顾光一徐苗苗于冰郭延璐肖旭东罗海林
Owner SHENZHEN INST OF ADVANCED TECH
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