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Groove schottky semiconductor device and manufacturing method thereof

A technology of semiconductor and Schottky potential, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems affecting the reverse breakdown characteristics of devices, high on-resistance, etc., and improve the forward conduction characteristics , Reduce the forward conduction resistance, increase the effect of impurity doping concentration

Active Publication Date: 2013-11-13
北海惠科半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is planar layout, the traditional planar Schottky diode has a sudden electric field distribution curve in the drift region, which affects the reverse breakdown characteristics of the device, while the traditional The planar Schottky diode has a high on-resistance

Method used

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  • Groove schottky semiconductor device and manufacturing method thereof
  • Groove schottky semiconductor device and manufacturing method thereof
  • Groove schottky semiconductor device and manufacturing method thereof

Examples

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Embodiment 1

[0021] figure 1 It is a cross-sectional view of a trench Schottky semiconductor device of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0022] A trench Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located on the substrate layer 1, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 ; Schottky barrier junction 5, located on...

Embodiment 2

[0031] figure 2 It is a cross-sectional view of a trench Schottky semiconductor device of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.

[0032] A trench Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located on the substrate layer 1, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 ; Schottky barrier junction 5, located ...

Embodiment 3

[0041] image 3 It is a cross-sectional view of a trench Schottky semiconductor device of the present invention, combined below image 3 The semiconductor device of the present invention will be described in detail.

[0042] A trench Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located on the substrate layer 1, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 ; Schottky barrier junction 5, located on...

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Abstract

The invention discloses a groove schottky semiconductor device which is provided with a charge compensation structure. First conducting semiconductor materials and second conducting semiconductor materials can form charge compensation when the semiconductor device is connected with a certain reverse bias, so that positive conducting or reverse blocking characteristics of the device can be improved. The invention further provides a manufacturing method of the groove schottky semiconductor device.

Description

technical field [0001] The invention relates to a trench Schottky semiconductor device, and also relates to a preparation method of the trench Schottky semiconductor device. The semiconductor device of the present invention is a basic structure for manufacturing power rectifying devices. Background technique [0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have disadvantages such as large reverse leakage current and cannot be used in high-voltage environments. [0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is planar layout, the traditional planar Schottky diode has a sudden electric field distribution...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L21/329
Inventor 朱江
Owner 北海惠科半导体科技有限公司
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