Electrostatic discharge protection structure and manufacturing method thereof

A technology for protecting structures and electrostatic discharge, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., and can solve problems such as high trigger voltage

Active Publication Date: 2013-10-30
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Based on this, it is necessary to provide an electrostatic discharge protection structure that is easy to adjust the trigger voltage through simple adjustments during design and manufacture for the problem of high trigger voltage of the traditional electrostatic discharge protection structure

Method used

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  • Electrostatic discharge protection structure and manufacturing method thereof
  • Electrostatic discharge protection structure and manufacturing method thereof
  • Electrostatic discharge protection structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] figure 2It is a schematic cross-sectional structure diagram of the first embodiment of the electrostatic discharge protection structure, including a p-type substrate 110 and an n-well 121 formed in the p-type substrate 110 by light doping. The n+ well region contact region 131 and the p+ well region anti-doping region 133 are formed by heavy doping in the n well 121, and the p+ substrate contact region 132 and n+ are formed by heavy doping in the p-type substrate 110 accordingly. The anti-doped region 134 of the substrate. The substrate anti-doping region 134 and the well region anti-doping region 133 are both located between the substrate contact region 132 and the well region contact region 131 .

[0036] Between the substrate anti-doping region 134 and the well region anti-doping region 133 , which is also the lateral junction between the p-type substrate 110 and the surface of the n well 121 , an n+ connection region 135 is formed by heavy doping. The connection ...

Embodiment 2

[0042] image 3 It is a schematic cross-sectional structure diagram of the second embodiment of the electrostatic discharge protection structure, and its structure and working principle are similar to those of the first embodiment. Specifically, the electrostatic discharge protection structure includes a p-type substrate 210 and an n-well 221 formed in the p-type substrate 210 by light doping. The n+ well region contact region 231 and the p+ well region anti-doping region 233 are formed by heavy doping in the n well 221, and the p+ substrate contact region 232 and n+ are formed by heavy doping in the p-type substrate 210 accordingly. The anti-doped region 234 of the substrate. The substrate anti-doping region 234 and the well region anti-doping region 233 are both located between the substrate contact region 232 and the well region contact region 231 .

[0043] Between the substrate anti-doping region 234 and the well region anti-doping region 233 , which is also the lateral...

Embodiment 3

[0048] Figure 4 It is a schematic cross-sectional structure diagram of the third embodiment of the electrostatic discharge protection structure, which is an embodiment after converting the n-well structure of the p-type substrate in the first embodiment into the p-well structure of the n-type substrate. It includes an n-type substrate 310 and a p-well 321 formed in the n-type substrate 310 by light doping. The p+ well region contact region 331 and the n+ well region anti-doping region 333 are formed by heavy doping in the p well 321, and the n+ substrate contact region 132 and p+ are formed by heavy doping in the n-type substrate 310 accordingly. The anti-doped region 334 of the substrate. The substrate anti-doping region 334 and the well region anti-doping region 333 are both located between the substrate contact region 332 and the well region contact region 331 .

[0049] Between the substrate anti-doping region 334 and the well region anti-doping region 333 , which is al...

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PUM

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Abstract

An electrostatic discharge protection structure, comprising a substrate having a first conduction type; a trap region having a second conduction type; a substrate contact region arranged in the substrate and having the first conduction type; a trap region contact region arranged in the trap region and having the second conduction type; a substrate counter-doped region located between the substrate contact region and the trap region contact region and having the second conduction type; a trap region counter-doped region located between the substrate contact region and the trap region contact region and having the first conduction type; a communication region arranged at the transverse junction of the substrate and the trap region; a first isolation region located between the substrate counter-doped region and the communication region; a second isolation region located between the trap region counter-doped region and the communication region; an oxidation layer, one end thereof being arranged on the first isolation region, and the other end thereof being arranged on the substrate; and a field plate structure arranged on the oxidation layer. Also disclosed is a fabrication method for an electrostatic discharge protection structure. The present invention can adjust an ON-voltage by adjusting the width and position of a field plate structure.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an electrostatic discharge protection structure, and also to a manufacturing method of the electrostatic discharge protection structure. Background technique [0002] Electro-Static Discharge (ESD) can cause damage to semiconductor components. [0003] A traditional electrostatic discharge protection structure is to use a silicon controlled rectifier (SCR), such as figure 1 shown. The thyristor structure is formed on a p-type substrate, and an n-well is formed on the p-type substrate through n-doping, thereby forming a PN junction structure between the p-type substrate and the n-well. At the same time, the p-type substrate and the n-well are doped respectively to form n+ and p+ regions as contact regions. Between the lateral junction of the substrate and the well region and the contact region, p+ and n+ counter-doped regions are respectively formed by heavy doping. ...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L21/82
CPCH01L29/87H01L29/66121H01L21/76202H01L21/8232H01L27/0248H01L21/0223H01L21/02255H01L21/26513H01L21/32055H01L21/76224H01L27/0255H01L29/402
Inventor 胡勇海代萌林忠瑀汪广羊
Owner CSMC TECH FAB2 CO LTD
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