Photovoltaic device, manufacturing method thereof, and photovoltaic module

A photovoltaic device and light-receiving surface technology, applied in photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as increased compound speed, reduced photovoltaic power, and reduced quality of semiconductor crystals, achieving ease of constraints, high photoelectricity Improve conversion efficiency and achieve cost reduction

Inactive Publication Date: 2013-10-23
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If the doping concentration is too high, the quality of the crystal as a semiconductor will be greatly reduced, and the recombination speed will increase, so the photovoltaic power will be reduced

Method used

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  • Photovoltaic device, manufacturing method thereof, and photovoltaic module
  • Photovoltaic device, manufacturing method thereof, and photovoltaic module
  • Photovoltaic device, manufacturing method thereof, and photovoltaic module

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Embodiment approach

[0057] Below, refer to Figure 1-1 to Figure 1-10 as well as Figure 2-1 to Figure 2-10 , while following the manufacturing process, the embodiment of the present invention will be described. Figure 1-1 to Figure 1-10 It is a sectional view showing an example of a method of manufacturing a photovoltaic device according to an embodiment of the present invention. Figure 2-1 to Figure 2-10 It is a perspective view showing an example of a method of manufacturing a photovoltaic device according to an embodiment of the present invention. Figure 2-1 to Figure 2-10 The steps shown correspond to the Figure 1-1 to Figure 1-10 the steps shown.

[0058] First, as a semiconductor substrate, for example, a p-type polysilicon substrate (hereinafter referred to as a p-type silicon substrate 101 a ) that is most widely used as a commercial solar cell is prepared ( Picture 1-1 , diagram 2-1 ).

[0059] The p-type silicon substrate 101a is produced by cutting and slicing a single-crys...

example 1

[0106] In the case of grid electrode spacing = 1 mm, process limit for patterning of high-concentration n-type diffusion layer = 100 μm (0.1 mm):

[0107] (0.1mm×0.1mm) / (1mm×1mm)=0.01(=1%)

[0108] (lower limit value example 2)

[0109] In the case of grid electrode spacing = 2 mm, process limit for patterning of high-concentration n-type diffusion layer = 100 μm (0.1 mm):

[0110] (0.1mm×0.1mm) / (2mm×2mm)=0.0025 (=0.25%)

[0111] In addition, in addition to the discontinuous shape, as the shape of the high-concentration n-type diffusion layer, a "wavy shape" that is continuous in the direction perpendicular to the longitudinal direction of the grid electrode in the light-receiving surface of the photovoltaic device and has a variable width is also proposed. "shape( Figure 9 ). Figure 9 It is a plan view schematically showing an example of the pattern of the high-concentration n-type diffusion layer 102a in this embodiment. exist Figure 9 middle, Figure 9 (a) shows a...

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Abstract

A photovoltaic device includes a silicon substrate of a first conduction type that includes an impurity diffusion layer on one surface side; a light-receiving-surface side electrode that includes a plurality of grid electrodes electrically connected to the impurity diffusion layer; and a back-surface side electrode formed on the other surface side of the silicon substrate wherein the impurity diffusion layer includes a first impurity diffusion layer and a second impurity diffusion layer, and wherein the first impurity diffusion layer is formed so that a direction perpendicular to a longitudinal direction of the grid electrodes is a longitudinal direction thereof, and so that an area ratio of the first impurity diffusion layer to a band region is equal to or lower than 50%.

Description

technical field [0001] The invention relates to a photovoltaic device, a manufacturing method thereof, and a photovoltaic module. Background technique [0002] In order to improve the performance of photovoltaic devices such as solar cells, there are three points: efficiently taking in sunlight into the device, converting the taken in light energy into electrical energy through high current-voltage characteristics, and efficiently taking out the converted light energy to the outside. is important. In addition, it is also important to be able to maintain long-term reliability of the output for a long period of time when considering the actual use as well. [0003] Generally, in order to manufacture a photovoltaic device, impurities of a conductivity type opposite to that of the substrate are diffused to the surface of the substrate to form an impurity diffusion layer (hereinafter referred to as a diffusion layer) on the surface of the substrate to form a PN junction. [000...

Claims

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Application Information

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IPC IPC(8): H01L31/04
CPCH01L31/1804H01L31/068H01L31/022425H01L31/02363H01L31/03529Y02E10/547Y02P70/50H01L31/04H01L31/18
Inventor 滨本哲
Owner MITSUBISHI ELECTRIC CORP
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