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Method for photoelectrically detecting nitrogen dioxide with trace amount

A nitrogen dioxide, photoelectric detection technology, applied in measurement devices, material analysis by optical means, instruments, etc., can solve the problems of low detection limit and high working temperature

Inactive Publication Date: 2013-10-09
XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Currently, NO 2 The resistive sensor detects the change of semiconductor resistance when gas is adsorbed or desorbed on the surface of semiconductor (mostly metal oxide), and there is a high working temperature (300 ℃-850 ℃) (Sensors and Actuators B 158, 2011, 1 –8) and the disadvantages of low detection limit (ppm level, that is, one millionth, V / V)

Method used

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  • Method for photoelectrically detecting nitrogen dioxide with trace amount
  • Method for photoelectrically detecting nitrogen dioxide with trace amount
  • Method for photoelectrically detecting nitrogen dioxide with trace amount

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Fabrication of resistive sensors:

[0024] Fix the electrode 2 on the ceramic substrate 1, connect the electrode 2 through the sensitive material titanium dioxide / graphene 3, connect the electrode 2 to the signal processor 5, and fix the heater and thermocouple 4 on the bottom of the ceramic substrate 1 to form a resistive sensor;

[0025] Photoelectric detection NO 2 Methods:

[0026] Add a light-emitting diode (LED) light source 6 with a wavelength of 367 nm directly above the resistive sensor, such as figure 1 As shown, the sensor is placed in the presence of a known concentration of NO 2 In atmosphere, at a temperature of 220°C and a light source of 6 9 W / m 2 Under the condition of light intensity, irradiate the sensitive material titanium dioxide / graphene composite material 3, and use the resistance change of titanium dioxide / graphene composite material 3 as a signal to calibrate the sensor;

[0027] The sensor was then exposed to an unknown concentration of NO...

Embodiment 2

[0029] The making of resistive sensor is carried out according to embodiment 1;

[0030] Photoelectric detection NO 2 Methods:

[0031] Add Xe light source 6 obliquely above the resistive sensor, use gratings, filters, lenses and mirrors to process the light into monochromatic light, so that the light with a wavelength of 200 nm is irradiated on the sensitive material titanium dioxide / graphene composite material 3; The absorption of different wavelengths of light by titanium dioxide / graphene composite material 3 is as follows: figure 2 As shown, the sensor is placed in the presence of a known concentration of NO 2 In atmosphere, at room temperature and light source 6: 0.001 W / m 2 Under the condition of light intensity, the sensor is calibrated by using the resistance change of the sensitive material titanium dioxide / graphene composite material 3 as a signal;

[0032] The sensor was then exposed to an unknown concentration of NO 2 In an atmosphere of 0.001 W / m at room tem...

Embodiment 3

[0034] Fabrication of resistive sensors:

[0035] Fix the electrode 2 on the ceramic substrate 1, connect the electrode 2 through the sensitive material nickel oxide 3, connect the electrode 2 to the signal processor 5, and fix the heater and the thermocouple 4 on the bottom of the ceramic substrate 1 to form a resistive sensor;

[0036] Photoelectric detection NO 2 Methods:

[0037] Add Xe light source 6 directly above the resistive sensor, such as figure 1 As shown, the sensor is placed in the presence of a known concentration of NO 2 In the atmosphere, the resistance change of the sensitive material nickel oxide material 3 is used as a signal, and the temperature is 100°C and the light source 6 is 0.001 W / m 2 Under the condition of light intensity, calibrate the sensor;

[0038] The sensor was then exposed to an unknown concentration of NO 2 In an atmosphere of 0.001 W / m at a temperature of 100°C and a light source 6 2 Under the condition of light intensity, for trace...

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Abstract

The invention relates to a method for photoelectrically detecting nitrogen dioxide with trace amount. A resistive sensor comprises a ceramic substrate, a fixed electrode, a sensitive material, a heater, a thermocouple, a signal processor and a light source. By utilizing the photoconductive effect of the sensitive material of the resistive sensor, light with a 200-800nm wavelength range is irradiated onto the sensitive material, and the nitrogen dioxide with the trace amount is detected through the change in resistance of the sensitive material, so that the NO2 detection limit is improved and simultaneously the working temperature is reduced. The method not only can improve the detection limit (reach ppb level), but also reduces the working temperature (room temperature to 220 DEG C).

Description

technical field [0001] The present invention relates to a trace NO 2 photoelectric detection method. specifically involves the use of light in a range of wavelengths to irradiate resistive NO 2 The sensitive material of the gas sensor, through the adsorbed NO 2 Gas-induced changes in photoconductivity of semiconductors, for trace NO 2 Perform detection and calibration. This method can lower the working temperature (room temperature to 220 °C) while increasing the detection limit (up to ppb level, ie parts per billion, V / V). Background technique [0002] Currently, NO 2 The resistive sensor detects the change of semiconductor resistance when gas is adsorbed or desorbed on the surface of semiconductor (mostly metal oxide), and there is a high working temperature (300 ℃-850 ℃) (Sensors and Actuators B 158, 2011, 1 –8) and low detection limit (ppm level, that is, one millionth, V / V) shortcomings. [0003] When the incident photon energy ( ) greater than or equal to the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/17
Inventor 祖佰祎窦新存陆彬郭亚楠杨政郭林娟
Owner XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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