GaN-based LED and method for manufacturing GaN-based LED

Abstract

The invention provides a GaN-based LED and a method for manufacturing the GaN-based LED. The method for manufacturing the GaN-based LED comprises the following steps: (a) an n-type GaN, a multi-quantum well and a p-type GaN are successively formed on a substrate; (b) a transparent conductive layer is formed on the p-type GaN; (c) mesa etching is performed on one part of the transparent conductive layer, the p-type GaN and the multi-quantum well until one part of the n-type GaN is exposed; (d) an oxide protective layer is formed on the transparent conductive layer and the exposed part of the n-type GaN; (e) the oxide protective layer is etched on a position with no mesa etching so that one part of the transparent conductive layer is exposed, and the oxide protective layer is etched on the position with mesa etching so that one part of the n-type GaN is exposed; (g) and a p electrode and an n electrode are formed on a rough surface and the part that n-type GaN is exposed respectively. The probability and the degree of losing an electrode can be reduced by using the GaN-based LED.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic device manufacturing, and in particular relates to a method for manufacturing a GaN-based LED and the GaN-based LED. Background technique [0002] Gallium nitride-based light-emitting diode (Light Emitting Diode, LED), as an optoelectronic device, realizes blue light emission, perfects the color spectrum, and has been widely used in the field of color display and lighting. The advantages of damage, fast start-up response time, and no pollution have won the attention of governments and companies in debugging, and the market prospect is getting wider and wider. [0003] figure 1 It is a schematic structural diagram of preparing a GaN-based LED in the prior art. Such as figure 1 As shown, n-type gallium nitride 12, multiple quantum wells 13, and p-type gallium nitride 14 are grown sequentially on a sapphire substrate 11. Then, a transparent conductive layer 17 is formed on the surface of ...

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Problems solved by technology

[0004] Because the contact between p, n electrode 15 and transparent conductive layer 17 is better than the contact between transparent conductive layer 17 and p-type gallium nitride 14, when playing gold ball or pushing gold ball on p, n electrode 15, its The force will be directly transmitted between the transparent conductive layer 17 and the p-type gallium nitride 14, affecting the adhesion between the two. During the tensile test or pushing the gold ball, this position will fall off, resulting in the problem of electrode drop

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