Dual heating vapor phase epitaxial growth system

Abstract

The invention discloses a dual heating hydride vapor phase epitaxial (HVPE) growth system which comprises an epitaxial growth chamber which is horizontally or vertically arranged, a dual heating device, a sample table, a metal source reactant accommodating device and a spraying device, wherein the dual heating device comprises an external heater and an internal heater; the samples are arranged on the sample table; a metal source is arranged in the metal source reactant accommodating device; the spraying device is positioned above the sample table and is connected with a second air inlet hole outside the epitaxial growth chamber; and the spraying device is used for spraying the reaction gas input from the second air inlet hole and the metallic compound entering from the metal source reactant accommodating device on the surface of the sample so as to promote the material growth. According to the dual heating device, the growth temperature of the HVPE reaction system is improved, and the high temperature area of more than 1500 is obtained in a quartz reaction area, so that the epitaxial growth of AlN and other materials can be realized; and moreover, according to the provided dual heating HVPE growth system, the energy consumption can be reduced, and the temperature control precision is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a double-heating vapor phase epitaxial growth system designed for growing semiconductor materials such as AlN-based materials. Background technique [0002] As the third-generation semiconductor, III-nitride semiconductor materials have developed rapidly, which has become an eye-catching event in my country's high-tech field in recent years. As one of the group III nitrides, AlN belongs to the direct bandgap structure with a wide bandgap (Eg=6.4eV), which is similar to an insulator; high resistivity (1011Ω), low dielectric constant (8.6) and other properties make AlN very It is suitable for electronic substrate materials and packaging materials for integrated circuits. In the application of electronic devices, due to the integration and miniaturization of high-power electronic devices, the heat generated per unit area of ​​electronic devices has greatly increa...

AI Technical Summary

Problems solved by technology

However, the growth temperature of high-quality single-crystal AlN reported internationally generally exceeds 1200 °C, and some even reach 1500 °C.

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