Growing method of grapheme with controllable number of layers

Abstract

The invention provides a growing method of grapheme with a controllable number of layers. The method at least comprises the following steps of: (1) providing a Cu substrate, and forming a Ni layer on the Cu substrate; (2) injecting C in the Ni layer by utilizing an ion injection method; and (3) carrying out annealing treatment on a structure formed in the step (2) so that partial Cu in the Cu substrate enters the Ni layer to form a Ni-Cu alloy; and squeezing C injected in the Ni layer out of the Ni layer by the Cu entering the Ni layer, and carrying out reconstruction on the surface of the Ni-Cu alloy to form grapheme. A grapheme membrane prepared by utilizing the growing method has the advantages of good quality, large size and controllability in the number of layers and is easy to transfer. Besides, an ion implantation technique and an annealing technique are very mature techniques in the conventional semiconductor industries, and the wide application of grapheme to the semiconductor industry can be promoted by the growing method of the grapheme with the controllable number of layers.

Description

technical field [0001] The invention belongs to the field of semiconductors, and relates to a method for preparing graphene, in particular to a method for growing graphene with a controllable layer number. Background technique [0002] In 2004, two scientists from the University of Manchester in the United Kingdom discovered graphene using the method of micromechanical exfoliation, and won the Nobel Prize in Physics in 2010. Graphene, the monoatomic layer of graphite, is a two-dimensional structure in which carbon atoms are arranged in a honeycomb shape. Since the discovery of graphene, due to its excellent performance and huge application prospects, it has triggered a research boom in the fields of physics and material science. Graphene is also widely used in the fields of light and electricity, including graphene-based lithium-ion batteries, solar cells, gas detectors and some devices. The application of graphene in optical and electrical fields is based on large-area gr...

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Problems solved by technology

Micromechanical exfoliation method can prepare high-quality graphene, but the area of ​​graphene prepared by this method is less than 1 mm × 1 mm, which can only be used for basic experimental research; graphene prepared by SiC sublimation method is greatly affected by the substrate , the number of layers is not uniform, and the substrate transfer cannot be performed

Although chemical vapor deposition method can prepare large-area graphene film, and is easy to substrate transfer, the controllability of the graphene film thickness that this method obtains is relatively poor, as preparing graphene (Xuesong Li, Weiwei Cai, Jinho An, Ruoff et al, Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils, Science, 2009, 324, 1312) is a surface-catalyzed self-limited growth mechanism, when the first layer of graphite When graphene covers 95% of the Cu surface, the catalytic effect of the Cu surface will weaken or even fail, so the graphene prepared on Cu is single-layer and a small amount of double-layer; graphene is prepared by CVD on Ni (Qingkai Yu, Jie Lian, Sujitra Siriponglert, et al, Graphene segregated on Ni surfaces and transferred to insulators , APPLIED PHYSICS LETTERS, 2008, 93, 113103) is a dissolution and elution mechanism to prepare graphene. The stage of graphene growth occurs during the cooling process. The number is affected by the cooling rate, so the prepared graphene is a multilayer film with uneven thickness.

[0004] In order to prepare graphene with a controllable layer number, Garaj et al. used ion implantation technology to inject carbon into Ni to prepare graphene (Garaj, Slaven, Hubbard, William et al, Graphene synthesis by ion implantation, APPLIED PHYSICS LETTERS, 2010, 97 , 183103), the purpose is to control the dose of injected carbon to control the number of layers, but this method still cannot break away from the dissolution and elution mechanism of Ni. At high temperature, the injected carbon freely diffuses in Ni. Precipitated from the grain boundaries of Ni, the experimental results also show that the number of prepared graphene layers is indeed uncontrollable

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