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Method for machining silicon carbide sealing ring parts with multiple electrodes atmospheric plasma

A plasma and sealing ring technology, used in plasma, electrical components, plasma welding equipment, etc., can solve the problem of difficult processing of silicon carbide sealing ring parts, achieve good processing quality consistency, reduce use costs, and low costs Effect

Active Publication Date: 2016-01-06
HARBIN INST OF TECH
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  • Description
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  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for processing silicon carbide sealing ring parts with multiple electrodes atmospheric plasma, in order to solve the problem of difficult processing of silicon carbide sealing ring parts

Method used

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  • Method for machining silicon carbide sealing ring parts with multiple electrodes atmospheric plasma
  • Method for machining silicon carbide sealing ring parts with multiple electrodes atmospheric plasma
  • Method for machining silicon carbide sealing ring parts with multiple electrodes atmospheric plasma

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specific Embodiment approach 1

[0023] Specific implementation mode one: combine figure 1 , figure 2 , image 3 As shown, its steps are:

[0024] Step 1: Insulate and connect the upper end surface of the disc-shaped electrode holder 1 to the vertically moving working shaft 2-1 of the gantry processing machine tool 2, and vertically arrange multiple sheet-shaped electrodes on the outer surface of the disc-shaped electrode holder 1 1-1, each sheet-shaped electrode 1-1 is collinear with the straight line where the diameter of the disk-shaped electrode holder 1 is located, so that each sheet-shaped electrode 1-1 passes through the output of the disk-shaped electrode holder 1 and the radio frequency power supply 3 The terminal is connected as an anode for atmospheric plasma discharge; multiple air outlet holes 1-2 on the disc-shaped electrode frame 1 pass through the air guide hole 1-3 in the center of the disc-shaped electrode frame 1, the gas pipe 6-1 and the mixed plasma gas. The source 6 is connected to t...

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Abstract

The invention discloses a multi-electrode air plasma processing method for a silicon carbide sealing ring part and belongs to the technical field of plasma processed silicon carbide sealing ring parts. The purpose is to solve the problem that the silicon carbide sealing ring parts are difficult to process. The method includes the following steps that a first step, a plurality of sheet-shaped electrodes are arranged vertically on the outer circle of a disc-shaped electrode stand; s second step, the silicon carbide sealing ring part to be processed is clamped on the electrodes; a third step, the lower end face of each sheet-shaped electrode is close to a to-be-processed surface of the silicon carbide sealing ring part; a fourth step, a radio-frequency power supply and a mixed plasma air source are preheated; a fifth step, mixed gas is injected, and the radio-frequency power supply is started; a sixth step, motion trails of all the sheet-shaped electrodes are controlled and dwell time on the surface of the part is controlled; a seventh step, the silicon carbide sealing ring part to be processed is taken out. According to the multi-electrode air plasma processing method for the silicon carbide sealing ring part, micro-structure-shaped surfaces of sealing ring parts with periodic repeating can be processed with high precision and high efficiency.

Description

technical field [0001] The invention belongs to the technical field of plasma processing silicon carbide sealing ring parts. Background technique [0002] With the rapid development of modern science and technology, in nuclear industry, petroleum industry, chemical industry, chemical fiber, chemical fertilizer, atomic energy, aerospace and machinery manufacturing and other industrial fields, higher requirements are put forward for mechanical seals. [0003] Silicon carbide (SiC) has good chemical corrosion resistance, high strength, high hardness, good wear resistance, small friction coefficient, strong oxidation resistance, good dimensional stability at extremely high temperatures, low thermal expansion coefficient, and thermal stability Good sex. In addition, silicon carbide materials have the characteristics of moderate density, high specific stiffness, good thermal conductivity, thermal shock resistance, thermal shock resistance, isotropic mechanical properties, high el...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32H01J37/02B23K10/00H05H1/46C04B41/91
Inventor 王波金江姚英学金会良乔政李娜辛强李铎
Owner HARBIN INST OF TECH
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