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Epitaxial structure for improving illumination efficiency of high-power GaN-base LED (light emitting diode) and growth method

A technology of epitaxial structure and luminous efficiency, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as the decline of luminous efficiency, and achieve the effect of improving performance, improving crystal quality, and improving device performance

Inactive Publication Date: 2013-08-14
江苏华功半导体有限公司
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  • Application Information

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Problems solved by technology

For high-power light-emitting diodes, the problem of sudden drop in efficiency under high-current injection has become the primary problem restricting the application of GaN-based high-power LEDs.

Method used

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  • Epitaxial structure for improving illumination efficiency of high-power GaN-base LED (light emitting diode) and growth method
  • Epitaxial structure for improving illumination efficiency of high-power GaN-base LED (light emitting diode) and growth method
  • Epitaxial structure for improving illumination efficiency of high-power GaN-base LED (light emitting diode) and growth method

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Embodiment Construction

[0033] The embodiments of the present invention are described in detail below: the present embodiment is implemented under the premise of the technical solution of the present invention, and detailed implementation and specific operation process are provided, but the protection scope of the present invention is not limited to the following implementation example.

[0034] like figure 1 The shown LED epitaxial structure includes, from bottom to top, substrate 1, low-temperature GaN buffer layer 2, GaN undoped layer 3, N-type GaN layer 4, multiple quantum well layer 5, light-emitting quantum well layer 6, A low-temperature P-type GaN layer 7 , an optimized structure PAIGaN / PInGaN electron blocking layer 8 , a high-temperature P-type GaN layer 9 , and a P-type contact layer 10 .

[0035] The method for epitaxially growing the electron blocking layer of a high-power gallium nitride-based light-emitting diode provided by the present invention includes the following specific steps:...

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Abstract

The invention discloses an epitaxial structure for improving the illumination efficiency of a high-power GaN-base LED (light emitting diode) and a growth method. The epitaxial structure sequentially comprises a substrate, a low-temperature GaN buffer layer, a GaN non-doping layer, an N type GaN layer, a multiple quantum well layer, a luminescent quantum well layer, a low-temperature P type GaN layer, a PAlGaN / PInGaN current blocking layer, a high-temperature P type GaN layer and a P type contact layer from bottom to top, wherein the growth of the PAlGaN / PInGaN electron blocking layer is completed through nine steps. An optimized PAlGaN / PInGaN structure layer is introduced between the epitaxial structure L-PGaN and H-PGaN, and a general electron blocking layer is replaced for further improving the electron leakage stopping effect. Through the structure, the performance of the InGaN / GaN base LED can be greatly improved in case of high-current-density injection.

Description

[0001] technical field [0002] The invention belongs to the technical field of InGaN / GaN-based light-emitting diode (LED) material preparation, and particularly relates to an epitaxial structure and a growth method of a high-power gallium nitride-based light-emitting diode, which can effectively improve the luminous efficiency of the gallium nitride-based light-emitting diode. [0003] Background technique [0004] High-power GaN-based InGaN / GaN multiple quantum well light-emitting diodes have been widely used in landscape lighting, automotive headlights, traffic lights and general lighting. For high-power light-emitting diodes, the problem of sudden drop in efficiency under high-current injection has become the primary problem restricting the application of GaN-based high-power LEDs. The leakage of carriers out of the active region before radiative recombination due to the high carrier density in the active region under high current injection is considered to be an imp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/12H01L33/14H01L33/30H01L33/00
Inventor 郭丽彬蒋利民刘仁锁杨奎吴礼清
Owner 江苏华功半导体有限公司
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