Reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with P floating layer current bolt
A floating layer and current technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of device reliability, increased turn-off loss, high local temperature, etc., to reduce the turn-off time, reduce the transition voltage, The effect of small cell size
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[0030] A kind of RC-IGBT with P floating layer proposed by the present invention, its structure is as follows image 3 As shown, it includes N+ active region 1, polysilicon gate electrode 2, silicon dioxide layer 3, active emitter 4, body P region 5, N-drift region 6, P floating layer current plug 7, N buffer layer 8 , N collector region 9, P collector region 10, silicon dioxide buried layer 11, N collector region and P collector region are located on both sides of the silicon dioxide buried layer 11, and the P floating layer 7 is located on the silicon dioxide buried layer Above the layer 11, the N buffer layer 8 is located above the N collector region 9 and the P collector region 10 and distributed on both sides of the P floating layer 7, and the N-drift region 6 is located on the N buffer layer 8 and the P floating layer. 7, the body P region 5 is located below the active emitter 4 and connected to the emitter 4, the N+ active region 1 is located inside the body P region 5 ...
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