Packaged light-emitting diodes with high transmittance

A light-emitting diode, high-penetration technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of low mechanical strength, poor adhesion, large difference in refractive index, etc., to achieve the effect of good luminous efficiency

Inactive Publication Date: 2017-02-08
蔡凯雄 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The epoxy resin itself contains an aromatic benzene ring structure that can absorb ultraviolet rays. After a period of use, the epoxy resin will yellow due to the benzene ring absorbing ultraviolet (UV) or endothermic aging, resulting in the penetration of the light-transmitting layer 14. Rate decay, brightness reduction
The mechanical strength of silicone resin is lower than that of epoxy resin, and its adhesion to the wafer 12 is poor. Its refractive index is between 1.4 and 1.5, so the refractive index difference with the wafer 12 is large, so that the transmittance is relatively high. low and low brightness

Method used

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  • Packaged light-emitting diodes with high transmittance
  • Packaged light-emitting diodes with high transmittance
  • Packaged light-emitting diodes with high transmittance

Examples

Experimental program
Comparison scheme
Effect test

preparation example 1

[0044] (a) Add 258 g of vinyl chloride (purchased from Formosa Plastics) to 15000 g of silane (Silane, purchased from Waker, Germany, model 62M) and three thousandths of potassium hydroxide (KOH) as a catalyst, and stir and mix at a temperature of 120°C 15250g of vinyl silicon-based material (Vinylsilicone) can be obtained in 30 minutes. Because part of the materials involved in the reaction is consumed during the reaction process, the weight will be reduced.

[0045] (b) Add 236 g of epoxy silane (purchased from Waker, Germany, model S510) to 15000 g of vinyl-bonded silicon-based material, and stir and mix for 10 minutes at a temperature of 25° C. to obtain 15236 g of A glue. At this time, the vinyl-bonded silicon-based material and epoxy silane will not react with each other. The chemical formula of the epoxy silane is as follows:

[0046]

[0047] (c) Add 15000g of hydrogen-bonded silicon-based material (Hydroxysilicone, purchased from Waker, Germany, model 62M) into 102g of A...

preparation example 2

[0050] (a) Same In the method described in (a), 15,250 g of vinyl-bonded silicon-based material was obtained.

[0051] (b) Add 15000 g of vinyl-bonded silicon-based material to 220 g of epoxy silane (purchased from Waker, Germany, model S520), stir and mix for 10 minutes at a temperature of 25° C. to obtain 15236 g of A glue. At this time, the vinyl-bonded silicon-based material and epoxy silane will not react with each other. The chemical formula of the epoxy silane is as follows:

[0052]

[0053] (c) Same In the method described in (c), 15102 g of B glue was obtained.

[0054] (d) Add 15220 g of A glue to 15102 g of B glue and stir and mix for 10 minutes at a temperature of 25° C. to cause the A glue and B glue to polymerize and obtain 30322 g of copolymer. The copolymer has 0.73% epoxy silane.

preparation example 3

[0056] (a) Same In the method described in (a), 15,250 g of vinyl-bonded silicon-based material was obtained.

[0057] (b) Add 736 g of epoxy silane to 15000 g of the vinyl-bonded silicon-based material, and stir and mix for 10 minutes at a temperature of 25° C. to obtain 15736 g of A glue. At this time, the vinyl-bonded silicon-based material and epoxy silane will not react with each other. The chemical formula of the epoxy silane is as follows:

[0058]

[0059] (c) Same In the method described in (c), 15102 g of B glue was obtained.

[0060] (d) Add 15736 g of A glue to 15102 g of B glue and stir and mix for 10 minutes at a temperature of 25° C. to cause the A glue and the B glue to polymerize and obtain 30838 g of copolymer. The copolymer has 2.38% epoxy silane.

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PUM

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Abstract

The invention discloses a high-transmittance packaged LED which comprises a substrate, a light emitting element, a lead unit and a heat-resistant layer. The light emitting element is formed on the substrate; the lead unit is connected with the substrate and the light emitting element; and the heat-resistant layer is at least formed on the light emitting diode and comprises light-transmitting silicon resin and 0.1%-10% of epoxy silicane by weight. Therefore, the heat-resistant layer is good in adhesive effect, high in transmittance, yellowing-free and capable of prolonging the service life of the high-transmittance packaged LED.

Description

Technical field [0001] The invention relates to a light-emitting diode, in particular to a packaged light-emitting diode with high transmittance. Background technique [0002] Compared with traditional incandescent lights, light-emitting diodes (LED) have many advantages, such as power saving, small size, long service life, high efficiency, and low pollution, making light-emitting diodes the best solution to replace existing lighting equipment. [0003] Since the light-emitting diode chip itself does not have the protective effects of oxidation and moisture resistance, it is necessary to package the chip before it can be used. The packaging process uses several metal wires to connect several electrodes of the chip to a substrate, so that the chip can use several solder joints on the substrate to form a circuit connection with the outside and emit light. [0004] Such as figure 1 As shown, an existing packaged light emitting diode includes a substrate 11, a chip 12, a plurality of me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/48H01L33/56C08L83/04
CPCH01L2224/48091H01L2224/73265
Inventor 蔡凯雄李建立
Owner 蔡凯雄
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