Dual-mode three-way wide-band filter based on multi-branch loaded square resonance ring

A technology of three-pass band and filter, which is applied in the direction of resonators, waveguide devices, electrical components, etc., can solve the problem of unsatisfactory frequency selectivity and achieve enhanced frequency selectivity and out-of-band suppression, enhanced frequency selectivity, The effect of downsizing

Active Publication Date: 2013-07-03
XIDIAN UNIV
View PDF3 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the split degenerate modes are almost multiplied, the frequency of this filter is limited by the resonance of the ring itself and cannot be freely controlled, so its frequency selectivity is not ideal.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dual-mode three-way wide-band filter based on multi-branch loaded square resonance ring
  • Dual-mode three-way wide-band filter based on multi-branch loaded square resonance ring
  • Dual-mode three-way wide-band filter based on multi-branch loaded square resonance ring

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The structure of this embodiment is as figure 1 shown. It is mainly composed of a microstrip dielectric substrate 1, a metal ground plate 2, two symmetrical square resonant rings 3 and 4, and input and output feeders 11. Each square resonant ring includes a square metal ring 5 and upper perturbation branches 7 And the lower perturbation stub 6, the transmission zero stub 8 and a pair of perturbation metal sheets 9 and 10, wherein:

[0036] The microstrip dielectric substrate 1 adopts a single-sided copper-clad dielectric substrate with a dielectric constant of 2.65 and a thickness of 1 mm;

[0037] The lower layer of the microstrip dielectric substrate 1 is a copper-clad grounding plate 2. The square resonant rings 3 and 4 have the same structure and size, and are symmetrically located on the upper layer of the microstrip dielectric substrate 1. The microstrip line width of the square metal ring 5 is 0.4 mm. The circumference of square metal ring 5 is: 2 (L 1 +L 2 )...

Embodiment 2

[0045] The structure of this embodiment is the same as that of Embodiment 1, and the structural parameters different from Embodiment 1 are provided below:

[0046] The microstrip line width of the square metal ring 5 is 0.4mm, and the perimeter of the square metal ring 5 is: 2(L 1 +L 2 )=42.4mm, equal to a dielectric waveguide wavelength λ g , corresponding to the resonant frequency Among them, L 1 and L 2 is the length of the two sides of the square metal ring 5, and L 1 =12.8mm, L 2 =8.4mm, c is the speed of light in vacuum, ε e is the effective permittivity of the microstrip resonator, f 0 is the resonant frequency of the square metal ring 5;

[0047] The total length L of the upper perturbation stub 7 p1 =30.8mm, the length L of the lower perturbation stub 6 p2 =24.9mm, the line width of the upper perturbation branch 7 and the line width of the lower perturbation branch 6 are both 0.8mm, and the upper perturbation branch 7 and the lower perturbation branch 6 are...

Embodiment 3

[0053] The structure of the present embodiment is the same as that of embodiment 1, and the structural parameters different from embodiment 1 are provided below:

[0054] The microstrip line width of the square metal ring 5 is 0.8mm, and the perimeter of the square metal ring 5 is: 2(L 1 +L 2 )=41.2mm, which is equal to a dielectric waveguide wavelength λ g , corresponding to the resonant frequency Among them, L 1 and L 2 is the length of the two sides of the square metal ring 5, and L 1 =11.8mm, L 2 =8.8mm, c is the speed of light in vacuum, ε e is the effective permittivity of the microstrip resonator, f 0 is the resonant frequency of the square metal ring 5;

[0055] The total length L of the upper perturbation stub 7 p1 =25.8mm, the length L of the lower perturbation stub 6 p2 =25.7mm, the line width of the upper perturbation branch 7 and the line width of the lower perturbation branch 6 are both 0.4mm, and the upper perturbation branch 7 and the lower perturbat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Frequencyaaaaaaaaaa
Lengthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a dual-mode three-way wide-band filter based on a multi-branch loaded square resonance ring, which mainly solves the problem that the frequency selectivity of a conventional dual-mode three-way wide-band filter is difficult to control. The filter comprises a micro-band dielectric substrate (1), a metal grounding plate (2), two symmetrical multi-branch loaded square resonance rings (3 and 4) and input and output feed lines (11). Each multi-branch loaded square resonance ring comprises a square metal ring (5), a lower perturbation branch (6), an upper perturbation branch (7), a transmission zero point branch (8), and a pair of perturbation metal sheets (9 and 10). The two perturbation branches (6 and 7) are located at a pair of external opposite angles of the square metal ring (5). Each perturbation branch is parallel to both sides of the metal ring (5). The pair of perturbation metal sheets (9 and 10) is located inside the other pair of opposite angles of the metal ring (5). The transmission zero point branch (8) is connected with the lower perturbation branch (6) in parallel and the input and output feed lines (11) are symmetrically placed above the micro-band dielectric substrate (1) and extend into one side of the metal ring (5) and the middle of the upper perturbation branch (7) in parallel. According to the filter, the frequency selectivity is improved, and the filter has good out-of-band rejection and can be applied to a wireless communication system.

Description

technical field [0001] The invention belongs to the technical field of electronic devices, in particular to a microstrip dual-mode three-pass band filter, which can be used for a radio frequency front end of a wireless communication system. Background technique [0002] With the rapid development of mobile communication, satellite communication, radar, and remote sensing technology, the wireless spectrum is increasingly crowded, which puts forward very strict requirements on the radio frequency microwave filter in the communication system. Microstrip filters have the advantages of small size, light weight, low cost, and easy processing, and are widely used in microwave circuits. There are various types and realization forms of microstrip filters, and the research of miniaturized high-performance microstrip filters has always been a hot field. Traditional filter forms such as Butterworth and Chebyshev filters can only meet high selectivity requirements by increasing the numb...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01P1/203H01P7/08
Inventor 吴边邓坤杨帅陈建忠王楠梁昌洪
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap