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Discharge components, chamber devices and pecvd equipment for substrate processing equipment

A substrate processing and equipment technology, applied in the field of chamber devices, can solve problems such as limited application and development, high cost, and complicated microwave source control, and achieve the effects of simple structure, low cost, and improved service life

Active Publication Date: 2016-04-20
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Compared with CCP devices, ECR devices have advantages in production capacity, but the control of microwave sources is very complicated and expensive, which limits its application and development

Method used

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  • Discharge components, chamber devices and pecvd equipment for substrate processing equipment
  • Discharge components, chamber devices and pecvd equipment for substrate processing equipment
  • Discharge components, chamber devices and pecvd equipment for substrate processing equipment

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Embodiment Construction

[0030] The embodiments of the present invention are described in detail below. Examples of the embodiments are shown in the accompanying drawings, in which the same or similar reference numerals indicate the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the drawings are exemplary, and are only used to explain the present invention, but should not be understood as limiting the present invention.

[0031] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientation or positional relationship indicated by "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying The description does not indicate or imply tha...

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Abstract

The invention provides a discharging component of a substrate processing device. The discharging component of the substrate processing device comprises a driving power source provided with a first end and a second end, an insulative blocking part provided with a through hole penetrating along the thickness direction of the insulative blocking part, a plurality of first electrodes which are connected with the first end of the driving power source and respectively arranged on the lower surface of the insulative blocking part and a plurality of second electrodes which are connected with the second end of the driving power source and respectively arranged on the upper surface of the insulative blocking part, wherein each of the first electrodes is arranged in a pair with each of the second electrodes. The first electrode and the second electrode in each electrode pair are staggered in the thickness direction of the insulative blocking part, so that a plasma discharging area generated by the first electrode and the second electrode is located below the insulative blocking part. According to the discharging component of the substrate processing device, dielectric barrier discharge (DBD) is adopted, so that the discharging component of the substrate processing device is high in discharging voltage, simple in structure and easy to control. The invention further provides a cavity device and a plasma enhanced chemical vapor deposition (PECVD) device provided with the cavity device.

Description

Technical field [0001] The invention relates to a discharge assembly of a substrate processing equipment, a chamber device with the discharge assembly, and a PECVD (plasma enhanced chemical vapor deposition) equipment with the chamber device. Background technique [0002] With the continuous development of plasma technology, plasma enhanced chemical vapor deposition (PECVD) equipment has been widely used in the process of manufacturing integrated circuit (IC) or photovoltaic (PV) products. In various PECVD equipments, parallel plate capacitively coupled plasma (CCP) and remote microwave excited plasma (ECR) can generate large-area uniform plasma, and can meet the chain-type production method. In solar cell manufacturing It has been widely used in the process. [0003] In the typical CCP device used in traditional PECVD equipment, the process gas enters the uniform flow chamber from the gas inlet. In the uniform flow chamber, the flow field and flow rate of the process gas are hom...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32C23C16/50
Inventor 张彦召
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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