Adjustable constraint device used for plasma processing device

A technology of restraint device and processing device, which is applied to discharge tubes, electrical components, circuits, etc., can solve the problems of non-uniformity, non-uniformity of substrate process, non-uniformity of substrate process in process area, etc., so as to improve process area asymmetry , Improve the effect of process uniformity problem

Active Publication Date: 2013-07-03
ADVANCED MICRO FAB EQUIP INC CHINA
View PDF6 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, those skilled in the art should understand that the plasma processing area in the plasma processing device will produce inhomogeneity, and the inhomogeneity of the process area will further lead to the inhomogeneity of the substrate process. As we all know, the unevenness of the substrate process Uniformity is the core technical problem to be solved in this field, and the present invention proposes based on this

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Adjustable constraint device used for plasma processing device
  • Adjustable constraint device used for plasma processing device
  • Adjustable constraint device used for plasma processing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The specific embodiments of the present invention will be described below in conjunction with the accompanying drawings.

[0027] The invention mechanism of the present invention is to set at least one spacer element between the corresponding electrical grounding element and the conductive element in the lower part of the plasma concentration in the processing area, in order to limit the sheath (sheath) produced here, improve The asymmetry of the plasma treatment area ensures the uniformity of the substrate process here and other areas of the substrate.

[0028] figure 1 Shows the process area in the plasma processing apparatus before using the present invention, such as figure 1 As shown, because it exemplarily directly or indirectly grounds the confinement device on the right side of the illustrated chamber, the process area A near this ground (the right side of the illustrated plasma processing apparatus) is "dragged ” is higher, and the plasma concentration is low...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an adjustable plasma constraint device applied to a plasma processing device, wherein the plasma constraint device is arranged between a processing area and an exhaust area, and comprises electric grounding elements, conducting elements and spacing elements. The conducting elements are arranged on the electric grounding elements, the conducting elements and the electric grounding elements are mutually insulated, and a plurality of exhaust channels are arranged on the conducting elements. Each spacing element is arranged between the electric grounding element and the conducting element, wherein the spacing elements are made of insulation materials. According to the adjustable plasma constraint device applied to the plasma processing device, the asymmetry of the plasma processing area can be improved, and processing non-uniformity of substrates is further improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an adjustable confinement device for a plasma processing device. Background technique [0002] The plasma processing device uses the working principle of the vacuum reaction chamber to process the semiconductor substrate and the substrate of the plasma flat panel. The working principle of the vacuum reaction chamber is to pass a reaction gas containing an appropriate etchant or deposition source gas into the vacuum reaction chamber, and then input radio frequency energy to the vacuum reaction chamber to activate the reaction gas to ignite and maintain the plasma body, in order to respectively etch the material layer on the surface of the substrate or deposit the material layer on the surface of the substrate, and then process the semiconductor substrate and the plasma plate. For example, capacitive plasma reactors have been widely used to process semiconductor substrat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
Inventor 吴紫阳李菁邱达燕
Owner ADVANCED MICRO FAB EQUIP INC CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap