Method for manufacturing brightness-improved GaN-based light emitting diode (LED) chip

Abstract

The invention discloses a method for manufacturing a brightness-improved GaN-based light emitting diode (LED) chip. The method comprises the following steps of: 1, taking a semiconductor substrate; 2, sequentially growing a low-temperature GaN buffer layer, a non-doped GaN layer, an N-GaN layer, a multi-quantum well light emitting layer and a P-GaN layer on the semiconductor substrate by adopting a metal organic chemical vapor deposition method to form a GaN epitaxial sheet; 3, performing downward etching on one side of the surface of the GaN epitaxial sheet till reaching the N-GaN layer, and forming a mesa on one side of the N-GaN layer; 4, performing vapor deposition on the upper surface of the GaN epitaxial sheet to form an indium tin oxide (ITO) film; 5, photo-etching a groove on the ITO film on the P-GaN layer, corroding the ITO film on the side walls of the multi-quantum well light emitting layer and the P-GaN layer, and reserving the ITO film on the mesa; and 6, manufacturing a P electrode in the groove on the ITO film, manufacturing an N electrode on the ITO film on the mesa, and thus obtaining the GaN-based LED chip.

Description

technical field [0001] The invention relates to the field of photoelectric devices, in particular to a method for manufacturing a GaN-based LED chip with improved brightness. Background technique [0002] A light emitting diode (LED) is a junction electroluminescent semiconductor device that converts electrical signals into optical signals. Once GaN-based LEDs appeared as solid-state light sources, they were widely praised for their high efficiency, long life, and environmental protection. Solid-state lighting using LEDs as new light sources will have the opportunity to gradually replace traditional lighting and enter the homes of ordinary people. [0003] Epitaxial wafers of sapphire substrates are generally used to prepare high-brightness GaN-based LEDs. How to improve the luminous efficiency of GaN-based LEDs has been the focus of research (see Figure 5 , Figure 5 is a schematic diagram of the structure of a conventional GaN-based LED). At present, the internal quantu...

AI Technical Summary

Problems solved by technology

In addition, when making ITO transparent electrodes, ITO is used as the ohmic contact metal layer with P-GaN and N-GaN at the same time, which solves the problem of ohmic contact between N electrodes and N-GaN due to the change of P and N metal systems

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